NSS1C200MZ4T1G ON Semiconductor, NSS1C200MZ4T1G Datasheet

NSS1C200MZ4T1G

Manufacturer Part Number

NSS1C200MZ4T1G

Description

TRANS PNP 100V 2A SOT223

Manufacturer

ON Semiconductor

Datasheet

1.NSS1C200MZ4T1G.pdf (5 pages)

Specifications of NSS1C200MZ4T1G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

220mV @ 200mA, 2A

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 500mA, 2V

Power - Max

800mW

Frequency - Transition

120MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Other names

NSS1C200MZ4T1GOSTR

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NSS1C200MZ4

100 V, 2.0 A, Low V

PNP Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material

2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

September, 2010 − Rev. 2

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current − Continuous

Collector Current − Continuous

Collector Current

Total Power Dissipation

Operating and Storage Junction

Thermal Resistance,

Maximum Lead Temperature for

ON Semiconductor’s e

Typical applications are DC−DC converters and power management

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Total P

Temperature Range

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Soldering Purposes, 1/8″ from

case for 5 seconds

Characteristic

@ T

Rating

= 25°C (Note 1)

= 25°C (Note 2)

− Peak

CE(sat)

= 25°C unless otherwise noted)

) and high current gain capability. These

PowerEdge family of low V

Symbol

CEO

, T

qJA

stg

PowerEdge devices to be

CE(sat)

−55 to

−100

−140

+150

Max

−7.0

Max

155

260

1.0

2.0

3.0

2.0

0.8

°C/W

Unit

Vdc

Adc

CE(sat)

°C

†For information on tape and reel specifications,

NSS1C200T1G

NSS1C200T3G

PNP LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

−100 VOLTS, 2.0 AMPS

1C200 = Specific Device Code

ORDERING INFORMATION

BASE

http://onsemi.com

PIN ASSIGNMENT

CASE 318E

Top View Pinout

SOT−223

= Assembly Location

= Year

= Work Week

= Pb−Free Package

STYLE 1

CE(sat)

COLLECTOR

(Pb−Free)

EMITTER

SOT−223

Package

Publication Order Number:

2,4

TRANSISTOR

NSS1C200MZ4/D

MARKING

DIAGRAM

Tape & Reel

1C200G

Shipping

AYW

1000/

4000/

†

Related parts for NSS1C200MZ4T1G

NSS1C200MZ4T1G Summary of contents

Page 1

... NSS1C200MZ4 100 V, 2.0 A, Low V PNP Transistor 2 ON Semiconductor’s e PowerEdge family of low V transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage (I = −0.1 mAdc Collector Cutoff Current (V = −140 Vdc Emitter Cutoff Current (V = ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 150°C 25°C −55°C 0.01 0.001 0.01 0 ...

Page 4

1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base−Emitter Voltage 400 300 200 100 ...

Page 5

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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