2SA1145-O(TE6,F,M) Toshiba, 2SA1145-O(TE6,F,M) Datasheet - Page 2

• Manufacturer Part Number: 2SA1145-O(TE6,F,M)
• Description: TRANS PNP 150V 50A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1145-O(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: - 150 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 50 mA
• Power Dissipation: 800 mW
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 200 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
Characteristics
FE
indicator
Characteristics
classification O: 80 to 160, Y: 120 to 240
A1145
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
h
V
Symbol
FE
(BR) CEO
CE (sat)
I
I
V
C
CBO
EBO
f
BE
T
ob
(Note) V
V
V
I
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
= −1 mA, I
= −10 mA, I
= −150 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
Test Condition
B
C
C
C
C
B
E
= 0
= 0
= −10 mA
= −10 mA
= −10 mA
E
= −1 mA
= 0, f = 1 MHz
= 0
−150
Min
80
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
200
2.5
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-09
Max
−0.1
−0.1
−1.0
−0.8
2SA1145
240
⎯
⎯
⎯
MHz
Unit
μA
μA
pF
V
V
V