2SA1145-O(TE6,F,M) Toshiba, 2SA1145-O(TE6,F,M) Datasheet - Page 3

• Manufacturer Part Number: 2SA1145-O(TE6,F,M)
• Description: TRANS PNP 150V 50A TO-92
• Manufacturer: Toshiba

Specifications of 2SA1145-O(TE6,F,M)

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: - 150 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 50 mA
• Power Dissipation: 800 mW
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 200 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

−0.05
−0.03
1000
−0.5
−0.3
−0.1
−50
−40
−30
−20
−10
300
100
−3
−1
−0.3
30
10
−0.3
0
0
Common emitter
V CE = −5V
Common emitter
I C /I B = 10
−1
−2
Collector-emitter voltage V
Collector current I
Collector current I
−1
−0.5
−4
Ta = 100°C
Ta = 100°C
−3
25
V
−25
CE (sat)
I
−6
h
C
−3
FE
– V
−25
I B = −0.1 mA
−0.4
25
– I
−10
CE
−8
C
– I
−0.3
−0.2
C
C
C
0
−10
Common emitter
Ta = 25°C
−10
CE
(mA)
(mA)
−30
(V)
−12
−30
−100
−14
−50
3
1000
−50
−40
−30
−20
−10
300
100
300
0.3
10
−0.5
−0.5
0
0
3
1
5
3
1
0
Common emitter
Ta = 25°C
−0.2
−1
−1
Collector-base voltage V
Base-emitter voltage V
Collector current I
Ta = 100°C
−0.4
−3
−3
C
−0.6
I
C
ob
f
T
– V
25
– V
– I
−0.8
−10
−10
V CE = −10V
CE
C
CB
−5
C
−25
BE
−1.0
Common emitter
V CE = −5 V
(mA)
CB
−30
−30
(V)
IE = 0
f = 1 MHz
Ta = 25°C
−1.2
(V)
2006-11-09
2SA1145
−100
−100
−1.4