MSB1218A-RT1G ON Semiconductor, MSB1218A-RT1G Datasheet - Page 2

• Manufacturer Part Number: MSB1218A-RT1G
• Description: TRANS PNP GP 100MA 45V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MSB1218A-RT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 2mA, 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

1000
250
200
150
100
100
50
10
900
800
700
600
500
400
300
200
100
0
-- 50
0.1
0
0.2
0.5
1
Figure 3. DC Current Gain
0
1
T
Figure 1. Derating Curve
T
T
I
A
A
A
C
I
, AMBIENT TEMPERATURE (C)
, COLLECTOR CURRENT (mA)
5
C
= -- 25C
= 75C
R
, COLLECTOR CURRENT (mA)
Figure 5. On Voltage
θJA
10
= 833C/W
20
10
50
T
A
40
= 25C
60
100
80
100
T
V
V
100 150 200
A
CE
CE
= 25C
= 5 V
= 10 V
http://onsemi.com
150
2
120
1.5
0.5
90
60
30
13
12
11
10
0
2
1
0
9
8
7
6
0.01
0
0
T
A
= 25C
Figure 4. Collector Saturation Region
3
0.1
1
V
CE
Figure 6. Capacitance
I
, COLLECTOR VOLTAGE (V)
Figure 2. I
B
, BASE CURRENT (mA)
6
V
EB
1
2
(V)
C
- - V
9
CE
10
3
T
12
A
300 mA
I
= 25C
B
= 50 mA
250
200
150
100
100
15
4