BCP 54-16 E6327 Infineon Technologies, BCP 54-16 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCP 54-16 E6327
• Description: TRANSISTOR NPN AF 45V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 54-16 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1500 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCP 54-16 E6327; BCP54-16E6327INTR; BCP5416E6327XT; SP000010709

Thermal Resistance
Parameter
Junction - soldering point
Maximum Ratings
Parameter
Collector-emitter voltage
BCP54
BCP55
BCP56
Collector-emitter voltage
BCP54
BCP55
BCP56
Collector-base voltage
BCP54
BCP55
BCP56
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current
Total power dissipation-
T
Junction temperature
Storage temperature
1
For calculation of R
S
≤ 120°C
thJA
please refer to Application Note Thermal Resistance
p
1)
≤ 10 ms
2
Symbol
R
Symbol
V
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
CEO
CER
CBO
EBO
tot
j
stg
thJS
-65 ... 150
BCP54...-BCP56...
Value
Value
≤ 15
100
100
100
200
150
1.5
45
60
45
60
45
60
80
5
1
2
2008-10-10
Unit
K/W
Unit
V
A
mA
W
°C