NSS1C201MZ4T3G ON Semiconductor, NSS1C201MZ4T3G Datasheet

NSS1C201MZ4T3G

Manufacturer Part Number

NSS1C201MZ4T3G

Description

TRANS NPN 100V 2A SOT223-4

Manufacturer

ON Semiconductor

Datasheet

1.NSS1C201MZ4T1G.pdf (6 pages)

Specifications of NSS1C201MZ4T3G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

180mV @ 200mA, 2A

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 500mA, 2V

Power - Max

800mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS1C201MZ4T3G

Manufacturer:

ON Semiconductor

Quantity:

254

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS1C201MZ4T3G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NSS1C201MZ4T3G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (101Kb)

NSS1C201MZ4

100 V, 2.0 A, Low V

NPN Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Feature

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 7.6 mm

2. FR−4 @ 645 mm

3. Thermal response.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

September, 2010 − Rev. 2

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Junction and Storage

ON Semiconductor’s e

Typical applications are DC−DC converters and power management

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Derate above 25°C

Junction−to−Ambient

Derate above 25°C

Junction−to−Ambient

(Single Pulse < 10 sec.)

Temperature Range

= 25°C

Characteristic

Rating

, 1 oz. copper traces.

CE(sat)

= 25°C)

) and high current gain capability. These

PowerEdge family of low V

qJA

Symbol

(Note 3)

(Note 1)

(Note 2)

Dsingle

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

stg

PowerEdge devices to be

CE(sat)

−55 to

+150

Max

15.6

100

140

800

155

710

7.0

2.0

3.0

6.5

mW/°C

°C/W

Unit

Vdc

CE(sat)

°C

†For information on tape and reel specifications,

NSS1C201MZ4T1G

NSS1C201MZ4T3G

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

100 VOLTS, 2.0 AMPS

1C201 = Specific Device Code

ORDERING INFORMATION

BASE

http://onsemi.com

PIN ASSIGNMENT

CASE 318E

Top View Pinout

SOT−223

= Assembly Location

= Year

= Work Week

= Pb−Free Package

STYLE 1

CE(sat)

COLLECTOR

(Pb−Free)

EMITTER

SOT−223

Package

Publication Order Number:

2,4

TRANSISTOR

NSS1C201MZ4/D

MARKING

DIAGRAM

Tape & Reel

1C201G

Shipping

AYW

1000/

4000/

†

Related parts for NSS1C201MZ4T3G

NSS1C201MZ4T3G Summary of contents

Page 1

... Device Package Shipping NSS1C201MZ4T1G SOT−223 1000/ (Pb−Free) Tape & Reel NSS1C201MZ4T3G SOT−223 4000/ (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage (I = 0.1 mAdc Collector Cutoff Current (V = 140 Vdc Emitter Cutoff Current (V = ...

Page 3

Note 2 0.40 0.30 Note 1 0.20 0. 100 T , TEMPERATURE (°C) J Figure 1. Power Derating 400 360 150°C 320 280 240 25°C 200 160 120 −55° ...

Page 4

1.2 −55°C 1 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 7. Base−Emitter Saturation Voltage 1.00 0 0.1 A ...

Page 5

Thermal Limit 0.1 0.01 0 COLLECTOR EMITTER VOLTAGE (V) CE Figure 13. Safe Operating Area http://onsemi.com 100 ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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