NSS1C201MZ4T3G ON Semiconductor, NSS1C201MZ4T3G Datasheet - Page 3

TRANS NPN 100V 2A SOT223-4

NSS1C201MZ4T3G

Manufacturer Part Number
NSS1C201MZ4T3G
Description
TRANS NPN 100V 2A SOT223-4
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSS1C201MZ4T3G

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
180mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
800mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSS1C201MZ4T3G
Manufacturer:
ON Semiconductor
Quantity:
254
Part Number:
NSS1C201MZ4T3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NSS1C201MZ4T3G
Manufacturer:
ON/安森美
Quantity:
20 000
0.60
0.50
0.40
0.30
0.20
0.10
0.01
400
360
320
280
240
200
160
120
0.1
80
40
0
0
1
0.001
0.001
0
Figure 5. Collector−Emitter Saturation Voltage
I
C
/I
20
B
= 20
I
I
Figure 3. DC Current Gain
0.01
0.01
C
C
40
Figure 1. Power Derating
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
Note 1
T
J
150°C
−55°C
25°C
, TEMPERATURE (°C)
60
Note 2
25°C
80
0.1
0.1
100
150°C
−55°C
120
1
1
V
CE
140
http://onsemi.com
= 4 V
160
10
10
3
0.01
400
360
320
280
240
200
160
120
0.1
1.4
1.2
0.8
0.6
0.4
0.2
80
40
0
1
1
0
0.001
0.001
0.001
Figure 4. Collector−Emitter Saturation Voltage
I
I
C
C
Figure 6. Base−Emitter Saturation Voltage
/I
/I
B
B
= 10
= 10
I
I
I
C
Figure 2. DC Current Gain
0.01
C
C
0.01
0.01
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
25°C
150°C
25°C
−55°C
0.1
0.1
0.1
150°C
−55°C
1
1
1
V
CE
= 2 V
10
10
10

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