NSS1C201MZ4T3G ON Semiconductor, NSS1C201MZ4T3G Datasheet - Page 3

• Manufacturer Part Number: NSS1C201MZ4T3G
• Description: TRANS NPN 100V 2A SOT223-4
• Manufacturer: ON Semiconductor

Specifications of NSS1C201MZ4T3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 180mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

0.60
0.50
0.40
0.30
0.20
0.10
0.01
400
360
320
280
240
200
160
120
0.1
80
40
0
0
1
0.001
0.001
0
Figure 5. Collector−Emitter Saturation Voltage
I
C
/I
20
B
= 20
I
I
Figure 3. DC Current Gain
0.01
0.01
C
C
40
Figure 1. Power Derating
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
Note 1
T
J
150°C
−55°C
25°C
, TEMPERATURE (°C)
60
Note 2
25°C
80
0.1
0.1
100
150°C
−55°C
120
1
1
V
CE
140
http://onsemi.com
= 4 V
160
10
10
3
0.01
400
360
320
280
240
200
160
120
0.1
1.4
1.2
0.8
0.6
0.4
0.2
80
40
0
1
1
0
0.001
0.001
0.001
Figure 4. Collector−Emitter Saturation Voltage
I
I
C
C
Figure 6. Base−Emitter Saturation Voltage
/I
/I
B
B
= 10
= 10
I
I
I
C
Figure 2. DC Current Gain
0.01
C
C
0.01
0.01
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
25°C
150°C
25°C
−55°C
0.1
0.1
0.1
150°C
−55°C
1
1
1
V
CE
= 2 V
10
10
10