NSS1C201MZ4T3G ON Semiconductor, NSS1C201MZ4T3G Datasheet - Page 2

• Manufacturer Part Number: NSS1C201MZ4T3G
• Description: TRANS NPN 100V 2A SOT223-4
• Manufacturer: ON Semiconductor

Specifications of NSS1C201MZ4T3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 180mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
DC Current Gain (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
Base −Emitter Saturation Voltage (Note 4)
Base −Emitter Turn−on Voltage (Note 4) (I
Cutoff Frequency (I
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
= 10 mA, V
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 0.1 A, I
= 0.5 A, I
= 1.0 A, I
= 2.0 A, I
= 1.0 A, I
B
B
B
B
B
CE
CE
= 0.010 A)
= 0.050 A)
= 0.100 A)
= 0.200 A)
= 0.100 A)
CE
CE
= 2.0 V)
= 2.0 V)
C
= 2.0 V)
EB
= 2.0 V)
= 100 mA, V
CB
= 0.5 V, f = 1.0 MHz)
EB
= 3.0 V, f = 1.0 MHz)
CB
Characteristic
= 6.0 Vdc)
= 140 Vdc, I
CE
E
= 5.0 V, f = 100 MHz)
C
= 0.1 mAdc, I
C
= 0.1 mAdc, I
(T
= 10 mAdc, I
E
C
A
= 0)
= 1.0 A, V
= 25°C unless otherwise noted)
C
E
= 0)
CE
B
= 0)
= 0)
http://onsemi.com
= 2.0 V)
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
BE(sat)
Cibo
BE(on)
h
CBO
EBO
f
FE
T
Min
100
140
150
120
7.0
80
40
Typ
100
305
22
0.030
0.060
0.100
0.180
0.850
Max
1.10
100
360
50
Unit
MHz
Vdc
Vdc
Vdc
nA
nA
pF
pF
V
V
V