RN1405T5LFT Toshiba, RN1405T5LFT Datasheet - Page 2

TRANSISTOR NPN 50V 0.1A SC-59

RN1405T5LFT

Manufacturer Part Number
RN1405T5LFT
Description
TRANSISTOR NPN 50V 0.1A SC-59
Manufacturer
Toshiba
Datasheet

Specifications of RN1405T5LFT

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
Characteristic
RN1401~1406
RN1401~1406
RN1401~1404
RN1405, 1406
RN1401~1406
RN1401~1406
RN1401~1404
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
RN1405
RN1406
(Ta = 25°C)
V
V
Symbol
V
R1/R2
CE (sat)
I
I
I
I (OFF)
h
I (ON)
C
CBO
CEO
EBO
R1
f
FE
T
ob
Circuit
Test
2
V
V
V
V
V
I
V
V
V
V
f = 1 MHz
C
CB
CE
EB
EB
CE
CE
CE
CE
CB
= 5 mA, I
= 10 V, I
= 5 V, I
= 50 V, I
= 50 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
B
C
C
C
C
E
B
C
E
= 0.25 mA
= 0
C
= 10 mA
= 0.1 mA
= 0
= 0
= 0
= 5 mA
= 0,
= 5 mA
RN1401~RN1406
0.0421 0.0468 0.0515
0.082
0.078
0.074
0.82
0.38
0.17
3.29
15.4
32.9
1.54
3.29
0.09
Min
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
0.9
30
50
70
80
80
80
7
Typ.
250
0.1
4.7
2.2
4.7
1.0
0.1
10
22
47
3
2007-11-01
0.145
0.138
Max
1.52
0.71
0.33
0.15
6.11
28.6
61.1
2.86
6.11
0.11
100
500
0.3
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
1.1
13
6
MHz
Unit
mA
nA
kΩ
pF
V
V
V

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