BTA216B-600F,118 NXP Semiconductors, BTA216B-600F,118 Datasheet - Page 2

• Manufacturer Part Number: BTA216B-600F,118
• Description: TRIAC 600V 16A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA216B-600F,118

• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 25mA
• Current - Non Rep. Surge 50, 60hz (itsm): 140A, 150A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3739-2; 934056008118; BTA216B-600F /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
April 2002
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
R
R
j
j
SYMBOL
I
I
I
V
V
I
SYMBOL
dV
dI
dI
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
th j-mb
th j-a
T
GT
com
com
D
/dt
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
2
CONDITIONS
full cycle
minimum footprint, FR4 board
CONDITIONS
V
V
V
I
V
V
T
V
CONDITIONS
V
T
waveform; gate open circuit
V
I
dV
open circuit
V
I
dV
open circuit
T
T(RMS)
T(RMS)
j
j
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
D
DM
DM
DM
= 20 A
= 125 ˚C
= 110 ˚C; exponential
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 67% V
= 400 V; T
= 400 V; T
/dt = 10V/ s; gate
/dt = 0.1V/ s; gate
= 16 A;
= 16 A;
DRM(max)
T
GT
GT
T
T
DRM(max)
= 0.1 A
= 0.1 A
; T
2
= 0.1 A
= 0.1 A
= 0.1 A;
j
j
BTA216B-
BTA216B-
= 125 ˚C;
= 125 ˚C;
j
= 125 ˚C
;
MIN.
0.25
...D
2.5
30
12
BTA216B series D, E and F
-
-
-
-
-
-
-
-
-
-
MIN.
...D
...E
6.2
15
25
25
15
60
20
MIN.
5
5
5
-
-
-
...D, E, F
MAX.
...E
1.5
1.5
0.5
...F
TYP.
10
10
10
25
30
30
25
70
18
50
-
55
-
-
Product specification
MAX.
MAX.
...F
25
25
25
30
40
40
30
1.2
1.7
-
-
-
-
Rev 2.000
UNIT
UNIT
A/ms
A/ms
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V