BTA216B-600F,118 NXP Semiconductors, BTA216B-600F,118 Datasheet - Page 4

• Manufacturer Part Number: BTA216B-600F,118
• Description: TRIAC 600V 16A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA216B-600F,118

• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 25mA
• Current - Non Rep. Surge 50, 60hz (itsm): 140A, 150A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3739-2; 934056008118; BTA216B-600F /T3

Philips Semiconductors
April 2002
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
100
10
0.001
50
40
30
20
10
commutating current dI
1
0.01
Fig.12. Mimimum, critical rate of change of
0
20
0.1
10
0
10us
dIcom/dt (A/ms)
IT / A
1
Vo = 1.195 V
Rs = 0.018 Ohms
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
temperature, dV
0.5
0.1ms
40
BTA216B series D, E and F
pulse width t
60
1ms
1
unidirectional
tp / s
typ
BT139
Tj/˚C
VT / V
10ms
1.5
80
com
com
/dt = 10V/ s.
/dt versus junction
P
D
bidirectional
p
.
0.1s
100
Product specification
2
max
t p
2.5
th j-mb
1s
120
F TYPE
E TYPE
D TYPE
t
Rev 2.000
, versus
10s
3
140