MAC4DSNT4G ON Semiconductor, MAC4DSNT4G Datasheet - Page 2

• Manufacturer Part Number: MAC4DSNT4G
• Description: THYRISTOR TRIAC 4A 800V DPAK
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of MAC4DSNT4G

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A @ 60Hz
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Current - On State (it (rms) (max): 4A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 15mA
• Gate Trigger Current (max): 10mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 40A
• On State Voltage(max): 1.6@6AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC4DSNT4G; MAC4DSNT4GOSTR

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8 from case for 10 seconds.
4. Pulse Test: Pulse Width
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MAC4DSM−001
MAC4DSM−001G
MAC4DSMT4
MAC4DSMT4G
MAC4DSN−001
MAC4DSN−001G
MAC4DSNT4
MAC4DSNT4G
Thermal Resistance, − Junction−to−Case
Maximum Lead Temperature for Soldering Purposes (Note 3)
Peak Repetitive Blocking Current
Peak On−State Voltage (Note 4)
Gate Trigger Current (Continuous dc) (V
Gate Trigger Voltage (Continuous dc) (V
Gate Non−Trigger Voltage (Continuous dc) (V
Holding Current
Latching Current (V
Rate of Change of Commutating Current
Critical Rate of Rise of Off−State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 16
(V
TM
D
D
D
D
= Rated V
= 12 V, Gate Open, Initiating Current = 200 mA)
= 400 V, I
= 0.67 X Rated V
= 6.0 A)
Device
TM
DRM
= 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open, T
D
, V
= 12 V, I
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RRM
DRM
2.0 msec, Duty Cycle
; Gate Open)
, Exponential Waveform, Gate Open, T
G
= 10 mA)
Characteristic
Characteristic
Characteristic
(T
D
D
= 12 V, R
J
= 12 V, R
= 25 C unless otherwise noted; Electricals apply in both directions)
Package Type
D
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
= 12 V, R
DPAK−3
DPAK−3
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
2%.
L
L
= 100 W)
= 100 W)
T
T
T
http://onsemi.com
L
J
J
J
= 100 W)
= 25 C
= 125 C
= 125 C
J
2
= 125 C)
J
= 125 C,
Package
369D
369D
369C
369C
369D
369D
369C
369C
Symbol
Symbol
Symbol
di/dt(c)
I
R
I
dv/dt
R
R
V
V
DRM,
V
RRM
I
T
GT
I
qJC
qJA
qJA
I
TM
GD
GT
H
L
L
Min
Min
2.9
2.9
2.9
0.5
0.5
0.5
0.2
2.0
3.0
50
−
−
−
−
−
−
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
75 Units / Rail
75 Units / Rail
Shipping
Max
0.65
260
Typ
Typ
175
3.5
1.3
4.0
5.0
7.0
0.7
0.7
0.4
5.5
6.0
6.0
4.0
88
80
10
−
−
Max
0.01
Max
2.0
1.6
1.3
1.3
1.3
†
10
10
10
15
30
30
30
−
−
−
A/ms
V/ms
Unit
Unit
Unit
C/W
mA
mA
mA
mA
V
V
V
C