MAC4DSN-001 ONSEMI [ON Semiconductor], MAC4DSN-001 Datasheet

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MAC4DSN-001

Manufacturer Part Number
MAC4DSN-001
Description
SILICON BIDIRECTIONAL THYRISTORS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
MAC4DSM, MAC4DSN
Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
1. V
MAXIMUM RATINGS
August, 2004 − Rev. 4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Peak Repetitive Off−State Voltage
On−State RMS Current
Peak Non-Repetitive Surge Current
Circuit Fusing Consideration
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 Amperes RMS at 108 C
Low IGT − 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt − 50 V/ms at 125 C
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Semiconductor Components Industries, LLC, 2004
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(Note 1) (T
50 to 60 Hz, Gate Open)
(Full Cycle Sine Wave, 60 Hz,
T
(One Full Cycle Sine Wave, 60 Hz,
T
(t = 8.3 msec)
(Pulse Width
(t = 8.3 msec, T
(Pulse Width
(Pulse Width
DRM
C
J
= 125 C)
= 108 C)
and V
J
RRM
= −40 to 125 C, Sine Wave,
Rating
Machine Model, C u 400 V
10 msec, T
10 msec, T
10 msec, T
C
for all types can be applied on a continuous basis. Blocking
= 108 C)
(T
J
= 25 C unless otherwise noted)
MAC4DSM
MAC4DSN
C
C
C
Preferred Device
= 108 C)
= 108 C)
= 108 C)
Symbol
I
P
V
T(RMS)
V
I
P
V
G(AV)
I
T
DRM,
TSM
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 125
−40 to 150
Value
600
800
4.0
6.6
0.5
0.1
0.2
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
3
3
1
2
3
4
MT2
ORDERING INFORMATION
4.0 AMPERES RMS
4
4
600 − 800 VOLTS
Y
WW
x
http://onsemi.com
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= M or N
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
G
DIAGRAMS
MARKING
MT1
MAC4DSM/D
YWW
YWW
4DSx
4DSx
AC
AC

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MAC4DSN-001 Summary of contents

Page 1

... MAC4DSM, MAC4DSN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On− ...

Page 2

... Device MAC4DSM−001 MAC4DSMT4 MAC4DSN−001 MAC4DSNT4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAC4DSM, MAC4DSN ( unless otherwise noted; Electricals apply in both directions) J Symbol I DRM, ...

Page 3

... Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. MAC4DSM, MAC4DSN (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE ...

Page 4

... INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics 8.0 Q1 6.0 4.0 2.0 0 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature MAC4DSM, MAC4DSN 6.0 5 CONDUCTION ANGLE 90 3.0 2.0 120 1.0 180 dc 0 3.0 3.5 4.0 0 Figure 2. On−State Power Dissipation 1.0 = 125 C J 0.1 0.01 4.0 5.0 ...

Page 5

... Gate−MT1 Resistance, MT2(+) 800 600 T = 100 C J 400 110 C 125 C 200 0 400 500 600 V , PEAK VOLTAGE (VOLTS) PK Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) MAC4DSM, MAC4DSN 5 100 125 −50 −25 T Figure 8. Typical Latching Current versus 1200 T ...

Page 6

... ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON-POLAR Note: Component values are for verification of rated (di/dt) Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) MAC4DSM, MAC4DSN 1600 GATE OPEN 1400 V = 400 V 1200 PK 1000 800 600 V 600 400 ...

Page 7

... 0.13 (0.005) M 5.80 0.228 MAC4DSM, MAC4DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT 6.20 3.0 0.244 0.118 2.58 0.101 1.6 6.172 0.063 0.243 SCALE 3:1 http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 8

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MAC4DSM, MAC4DSN PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B ...

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