MAC4DSNT4G ON Semiconductor, MAC4DSNT4G Datasheet - Page 5

• Manufacturer Part Number: MAC4DSNT4G
• Description: THYRISTOR TRIAC 4A 800V DPAK
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of MAC4DSNT4G

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A @ 60Hz
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Current - On State (it (rms) (max): 4A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 15mA
• Gate Trigger Current (max): 10mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 40A
• On State Voltage(max): 1.6@6AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC4DSNT4G; MAC4DSNT4GOSTR

1000
800
600
400
200
800
600
400
200
8.0
6.0
4.0
2.0
14
12
10
0
0
0
-50
100
400
MT2 POSITIVE
125 C
Figure 11. Exponential Static dv/dt versus
Figure 7. Typical Holding Current versus
Figure 9. Exponential Static dv/dt versus
800 V
-25
110 C
R
Gate−MT1 Resistance, MT2(+)
G-MT1
500
MT2 NEGATIVE
T
J
600 V
, JUNCTION TEMPERATURE ( C)
Junction Temperature
V
0
Peak Voltage, MT2(+)
, GATE-MT1 RESISTANCE (OHMS)
PK
, PEAK VOLTAGE (VOLTS)
T
25
V
J
PK
= 100 C
1000
600
= 400 V
50
75
700
T
GATE OPEN
J
= 125 C
100
http://onsemi.com
10 k
125
800
5
1200
1000
2000
1600
1200
800
600
400
200
800
400
5.0
25
20
15
10
0
0
0
-50
100
400
Q3
600 V
800 V
125 C
Figure 10. Exponential Static dv/dt versus
Figure 12. Exponential Static dv/dt versus
Figure 8. Typical Latching Current versus
Q2
Q1
T
-25
J
V
= 100 C
PK
R
Gate−MT1 Resistance, MT2(−)
= 400 V
G-MT1
500
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
0
V
Peak Voltage, MT2(−)
, GATE-MT1 RESISTANCE (OHMS)
PK
, PEAK VOLTAGE (VOLTS)
110 C
25
1000
600
50
75
700
T
J
= 125 C
GATE OPEN
100
10 k
125
800