PIC16F1827T-I/SO Microchip Technology, PIC16F1827T-I/SO Datasheet - Page 116

• Manufacturer Part Number: PIC16F1827T-I/SO
• Description: 7 KB Flash, 384 Bytes RAM, 32 MHz Int. Osc, 16 I/0, Enhanced Mid Range Core 18 S
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16F1827T-I/SO

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 32MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 7KB (4K x 14)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 18-SOIC (7.5mm Width)
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 5
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC16F/LF1826/27
11.4
When modifying existing data in a program memory
row, and data within that row must be preserved, it must
first be read and saved in a RAM image. Program
memory is modified using the following steps:
1.
2.
3.
4.
5.
6.
7.
8.
TABLE 11-2:
EXAMPLE 11-3:
DS41391C-page 116
* This code block will read 1 word of program memory at the memory address:
*
*
Load the starting address of the row to be mod-
ified.
Read the existing data from the row into a RAM
image.
Modify the RAM image to contain the new data
to be written into program memory.
Load the starting address of the row to be rewrit-
ten.
Erase the program memory row.
Load the write latches with data from the RAM
image.
Initiate a programming operation.
Repeat steps 6 and 7 as many times as required
to reprogram the erased row.
PROG_ADDR_LO (must be 00h-08h) data will be returned in the variables;
PROG_DATA_HI, PROG_DATA_LO
BANKSEL
MOVLW
MOVWF
CLRF
BSF
BCF
BSF
NOP
NOP
BSF
MOVF
MOVWF
MOVF
MOVWF
Modifying Flash Program Memory
8000h-8003h
8007h-8008h
Address
8006h
EEADRL
PROG_ADDR_LO
EEADRL
EEADRH
EECON1,CFGS
INTCON,GIE
EECON1,RD
INTCON,GIE
EEDATL,W
PROG_DATA_LO
EEDATH,W
PROG_DATA_HI
USER ID, DEVICE ID AND CONFIGURATION WORD ACCESS (CFGS = 1)
CONFIGURATION WORD AND DEVICE ID ACCESS
Configuration Words 1 and 2
Device ID/Revision ID
; Select correct Bank
;
; Store LSB of address
; Clear MSB of address
; Select Configuration Space
; Disable interrupts
; Initiate read
; Executed (See Figure 11-1)
; Ignored (See Figure 11-1)
; Restore interrupts
; Get LSB of word
; Store in user location
; Get MSB of word
; Store in user location
Function
User IDs
Preliminary
11.5
Instead of accessing program memory or EEPROM
data memory, the User ID’s, Device ID/Revision ID and
Configuration Words can be accessed when CFGS = 1
in the EECON1 register. This is the region that would
be pointed to by PC<15> = 1, but not all addresses are
accessible. Different access may exist for reads and
writes. Refer to Table 11-2.
When read access is initiated on an address outside
the parameters listed in Table 11-2, the EEDATH:EED-
ATL register pair is cleared.
Read Access
User ID, Device ID and
Configuration Word Access
Yes
Yes
Yes
 2010 Microchip Technology Inc.
Write Access
Yes
No
No