PIC16LF1937-E/MV Microchip Technology, PIC16LF1937-E/MV Datasheet - Page 3

• Manufacturer Part Number: PIC16LF1937-E/MV
• Description: 14KB Flash, 512B RAM, 256B EEPROM, LCD, NanoWatt XLP 40 UQFN 5x5x0.5mm TUBE
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16LF1937-E/MV

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 32MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 14KB (8K x 14)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 14x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 40-UFQFN Exposed Pad
• Processor Series: PIC16F
• Core: PIC
• Data Ram Size: 256 B
• Interface Type: MI2C, SPI, EUSART
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: MPLAB IDE Software
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Errata Issues
1. Module: Data EE Memory
1.1 Data EE Memory Endurance
1.2 Data EE Write at Min. V
2. Module: Program Flash Memory (PFM)
2.1 Program Flash Memory Endurance
 2010 Microchip Technology Inc.
Note:
The typical write/erase endurance of the Data EE
Memory is limited to 10k cycles.
Work around
Use error correction method that stores data in
multiple locations.
Affected Silicon Revisions
The minimum voltage required for a Data EE write
operation is 2.0 volts.
Work around
None.
Affected Silicon Revisions
The typical write/erase endurance of the PFM is
limited to 1k cycles when V
Endurance degrades when V
Work around
Use an error correction method that stores data
in multiple locations.
Affected Silicon Revisions
A2
A2
A2
X
X
X
PIC16F1934/1936/1937 and PIC16LF1934/1936/1937
This document summarizes all silicon
errata issues from all revisions of silicon,
previous as well as current. Only the
issues indicated by the shaded column in
the following tables apply to the current
silicon revision (A6).
A3
A3
A3
X
X
X
A5
A5
A5
X
X
X
A6
A6
A6
X
DD
DD
DD
is above 3.0 volts.
is below 3V.
2.2 Program Flash Memory writes at Min. V
3. Module: Capture Compare PWM (CCP)
3.1 Dead Band Delay
3.2 ECCP2 Switching Between Single, Half-
3.3 ECCP2 Changing Direction in Full-Bridge
The minimum voltage required for a PFM write
operation is 2.0V.
Work around
None.
Affected Silicon Revisions
With the ECCP configured for PWM half-bridge
mode and a dead-band delay greater than or equal
to the PWM duty cycle; unpredictable wave forms
will result.
Work around
Make sure the dead-band delay is always less
than the PWM duty cycle.
Affected Silicon Revisions
Bridge and Full-Bridge PWM modes
Switching PWM mode during the current PWM
cycle by modifying the P2M[1:0] bits in the
CCP2CON register will cause the PWM outputs to
switch immediately and not on the start of the next
PWM cycle.
Work around
None.
Affected Silicon Revisions
PWM modes
When
modulated outputs will improperly go active at the
same time and the dead time does not occur which
can lead to large shoot-through currents.
Work around
None.
Affected Silicon Revisions
A2
A2
A2
A2
X
X
X
X
A3
A3
A3
A3
X
X
X
changing
X
A5
A5
A5
A5
X
X
X
X
A6
A6
A6
A6
direction
X
X
X
X
the
DS80479F-page 3
active
DD
and