PIC18F45K20T-I/MV Microchip Technology, PIC18F45K20T-I/MV Datasheet - Page 380

• Manufacturer Part Number: PIC18F45K20T-I/MV
• Description: 32KB, Flash, 1536bytes-RAM, 36I/O, 8-bit Family,nanowatt XLP 40 UQFN 5x5x0.5mm T
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F45K20T-I/MV

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 64MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 35
• Program Memory Size: 32KB (16K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 14x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 40-UFQFN Exposed Pad
• Processor Series: PIC18
• Core: PIC18F
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: I2C, SPI, SCI, USB, MSSP, RJ11
• Maximum Clock Frequency: 64 MHz
• Number Of Programmable I/os: 35
• Number Of Timers: 4
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: MPLAB Integrated Development Environment
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 85 C
• Supply Current (max): 14 uA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC18F2XK20/4XK20
26.10 Memory Programming Requirements
DS41303G-page 380
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
Note 1:
Param
No.
2:
3:
4:
5:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
DEW
RETD
REF
IW
RETD
PP
D
DRW
P
PR
IW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Self-write and Block Erase.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
for Read/Write
for Read
for Row Erase or Write
Characteristic
PP
/RE3 pin
(2)
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
DD
100K
10K
Min
1.8
1M
1.8
2.2
40
40
—
—
—
+ 4.5
PP
output. Circuitry to limit the ICD 2 V
Typ†
10M
—
—
—
—
—
—
—
—
—
4
2
Max
3.6
3.6
3.6
10
—
—
—
—
—
—
—
9
Units
Year
Year
E/W
E/W
E/W
mA
A
ms
ms
V
V
V
V
 +125°C
 2010 Microchip Technology Inc.
(Note 3, Note 4)
-40C to +85C
Using EECON to
read/write
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (NOTE 5)
Provided no other
specifications are violated
PP
voltage must be
Conditions