SST38VF6401-90-5I-EKE Microchip Technology, SST38VF6401-90-5I-EKE Datasheet - Page 3

• Manufacturer Part Number: SST38VF6401-90-5I-EKE
• Description: 2.7V To 3.6V 64Mbit Pm Parallel Advanced MPF+ 48 TSOP 12x20 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST38VF6401-90-5I-EKE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (4M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFSOP (0.472", 12.0mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Write-Buffer Programming
The SST38VF6401/6402/6403/6404 offer Write-Buffer
Programming, a feature that enables faster effective word
programming. To use this feature, write up to 16 words with
the Write-to-Buffer command, then use the Program
Buffer-to-Flash command to program the Write-Buffer to
memory.
The Write-to-Buffer command consists of between 5 and
20 write cycles. The total number of write cycles in the
Write-to-Buffer command sequence is equal to the number
of words to be written to the buffer plus four.
The first three cycles in the command sequence tell the
device that a Write-to-Buffer operation will begin.
The fourth cycle tells the device the number of words to be
written into the buffer and the block address of these words.
Specifically, the write cycle consists of a block address and
a data value called the Word Count (WC), which is the
number of words to be written to the buffer minus one. If the
WC is greater than 15, the maximum buffer size minus 1,
then the operation aborts.
For the fifth cycle, and all subsequent cycles of the Write-
to-Buffer command, the command sequence consists of
the addresses and data of the words to be written into the
buffer. All of these cycles must have the same A
address, otherwise the operation aborts. The number of
Write cycles required is equal to the number of words to be
written into the Write-Buffer, which is equal to WC plus one.
The correct number of Write cycles must be issued or the
operation will abort. Each Write cycle decrements the
Write-Buffer counter, even if two or more of the Write cycles
have identical address values. Only the final data loaded for
each buffer location is held in the Write-Buffer.
Once the Write-to-Buffer command sequence is com-
pleted, the Program Buffer-to-Flash command should be
issued to program the Write-Buffer contents to the speci-
fied block in memory. The block address (i.e. A
this command must match the block address in the 4th
write cycle of the Write-to-Buffer command or the operation
aborts. See Table 11 for details on Write-to-Buffer and Pro-
gram-Buffer-to-Flash commands.
While issuing these command sequences, the Write-Buffer
Programming Abort detection bit (DQ1) indicates if the
operation has aborted. There are several cases in which
the device can abort:
•
•
©2009 Silicon Storage Technology, Inc.
In the fourth write cycle of the Write-to-Buffer com-
mand, if the WC is greater than 15, the operation
aborts.
In the fifth and all subsequent cycles of the Write-to-
Buffer command, if the address values, A
not identical, the operation aborts.
21
21
- A
- A
21
4
15
, are
- A
) in
4
3
•
•
•
If the Write-to-Buffer or Program Buffer-to-Flash operation
aborts, then DQ
Abort mode. To execute another operation, a Write-to-
Buffer Abort-Reset command must be issued to clear DQ
and return the device to standard read mode.
After the Write-to-Buffer and Program Buffer-to-Flash
commands are successfully issued, the programming
operation can be monitored using Data# Polling, Toggle
Bits, and RY/BY#.
Sector/Block-Erase Operations
The Sector-Erase and Block-Erase operations allow the
system to erase the device on a sector-by-sector, or block-
by-block, basis. The SST38VF6401/6402/6403/6404 offer
both Sector-Erase and Block-Erase modes.
The Sector-Erase architecture is based on a sector size of
4 KWords. The Sector-Erase command can erase any 4
KWord sector (S0 - S1023).
The Block-Erase architecture is based on block size of 32
KWords. In SST38VF6401 and SST38VF6402 devices,
the Block-Erase command can erase any 32KWord Block
(B0-B127). For the non-uniform boot block devices,
SST38VF6403 and SST38VF6404, the Block-Erase com-
mand can erase any 32 KWord block except the block that
contains the boot area. In the boot area, Block-Erase
behaves like Sector-Erase, and only erases a 4KWord sec-
tor. For the SST38VF6403 device, a Block-Erase executed
on the Boot Block (B0), will result in the device erasing a
4KWord sector in B0 located at A
SST38VF6404 device, a Block-Erase executed on the
Boot Block (B127), will result in the device erasing a
4KWord sector in B127 located at A
The Sector-Erase operation is initiated by executing a six-
byte command sequence with Sector-Erase command
(50H) and sector address (SA) in the last bus cycle. The
Block-Erase operation is initiated by executing a six-byte
command sequence with Block-Erase command (30H)
and block address (BA) in the last bus cycle. The sector or
block address is latched on the falling edge of the sixth
If the number of write cycles between the fifth to the
last cycle of the Write-to-Buffer command is greater
than WC +1, the operation aborts.
After
sequence, issuing any command other than the Pro-
gram Buffer-to-Flash command, aborts the operation.
Loading a block address, i.e. A
Buffer-to-Flash command that does not match the
block address used in the Write-to-Buffer command
aborts the operation.
completing
1
= 1 and the device enters Write-Buffer-
the
Write-to-Buffer
21
21
-A
-A
12
15,
S71309-05-000
21
.
-A
in the Program
12
Data Sheet
. For the
command
07/09
1