MT47H32M16HR-25E IT:F Micron Technology Inc, MT47H32M16HR-25E IT:F Datasheet - Page 120

• Manufacturer Part Number: MT47H32M16HR-25E IT:F
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E IT:F

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 71: WRITE-to-Power-Down or Self Refresh Entry
Figure 72: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
CKE
A10
CK#
CKE
A10
DQ
DQ
CK
CK
WRITE
Valid
Valid
WRITE
T0
T0
Notes:
Note:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may oc-
2. WR is programmed through MR9–MR11 and represents (
cur 1 x
to next integer
NOP
NOP
T2
T2
t
CK later at Ta1, prior to
NOP
t
DO
NOP
DO
CK.
T3
T3
DO
DO
120
Valid
Valid
DO
DO
T4
T4
t
RP being satisfied.
DO
DO
Indicates a break in
time scale
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
Valid
T5
T5
512Mb: x4, x8, x16 DDR2 SDRAM
WR 2
Valid 1
Valid
t WTR
Ta0
T6
Transitioning Data
t
self refresh entry 1
self refresh entry
Power-down or
WR [MIN] ns/
Power-down or
Transitioning Data
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
NOP 1
NOP
Ta1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
T8
Don’t Care
Don’t Care