MT47H32M16HR-25E IT:F Micron Technology Inc, MT47H32M16HR-25E IT:F Datasheet - Page 28

• Manufacturer Part Number: MT47H32M16HR-25E IT:F
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E IT:F

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter/Condition
Operating one bank active-pre-
charge current:
t
HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switch-
ing; Data bus inputs are switching
Operating one bank active-read-
precharge current: I
4, CL = CL (I
t
t
HIGH between valid commands; ad-
dress bus inputs are switching; Data
pattern is same as I
Precharge power-down current:
All banks idle;
LOW; Other control and address bus
inputs are stable; Data bus inputs are
floating
Precharge quiet standby current:
All banks idle;
HIGH, CS# is HIGH; Other control and
address bus inputs are stable; Data
bus inputs are floating
Precharge standby current: All
banks idle;
HIGH, CS# is HIGH; Other control and
address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All
banks open;
LOW; Other control and address bus
inputs are stable; Data bus inputs are
floating
Active standby current: All banks
open;
MAX (I
HIGH, CS# is HIGH between valid com-
mands; Other control and address bus
inputs are switching; Data bus inputs
are switching
RC (I
RC =
RCD =
DD
t
RC (I
t
DD
CK =
t
),
RCD (I
),
t
RAS =
DD
t
t
DD
RP =
CK =
t
t
CK (I
),
CK =
), AL = 0;
DD
t
t
t
CK =
CK =
RAS =
); CKE is HIGH, CS# is
t
t
RAS MIN (I
t
t
DD
RP (I
CK (I
CK =
t
DD4W
CK (I
DD
),
t
t
CK (I
CK (I
t
DD
OUT
t
RAS =
DD
RAS MIN (I
Specifications and Conditions (Die Revision G)
t
t
CK (I
CK =
DD
); CKE is
); CKE is
= 0mA; BL =
DD
DD
); CKE is
DD
); CKE is
); CKE is
DD
t
t
RAS
CK (I
); CKE is
),
t
DD
RC =
DD
),
),
Symbol
I
I
I
I
I
I
DD3Pf
DD3Ps
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
Slow PDN exit
Fast PDN exit
Configura-
x4, x8, x16
MR12 = 0
MR12 = 1
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
tion
x16
x16
x16
x16
x16
28
Electrical Specifications – I
-187E
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
-25E/
-25
65
80
75
95
24
26
28
30
18
33
35
7
9
-3E/-3
60
75
70
90
22
24
25
27
15
30
32
7
9
-37E
© 2004 Micron Technology, Inc. All rights reserved.
55
70
65
85
20
22
23
25
14
27
29
7
9
DD
-5E
55
70
65
85
19
20
21
23
13
24
26
7
9
Parameters
Units
mA
mA
mA
mA
mA
mA
mA