ALXD800EEXJCVD C3 AMD (ADVANCED MICRO DEVICES), ALXD800EEXJCVD C3 Datasheet - Page 605

• Manufacturer Part Number: ALXD800EEXJCVD C3
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of ALXD800EEXJCVD C3

• Operating Temperature (min): 0C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

Electrical Specifications
AMD Geode™ LX Processors Data Book
Symbol
I
I
I
LEAK
PU/PD
OH
Parameter
Input Leakage Current Including Hi-Z Output Leakage, Note 1
PCI
24/Q3
24/Q5
24/Q7
5V
DDR
DDRCLK
Weak Pull-Up/Down Current, Note 1
PCI
24/Q3
24/Q5
24/Q7
5V
DDR
DDRCLK
Output High Current, Note 1
PCI
24/Q3
24/Q5
24/Q7
5V
DDR (BA[1:0], MA[13:0])
DDR (DQ[63:0], CKE[1:0],
CS[3:0]#, RAS[1:0]#, CAS[1:0]#,
WE[1:0]#, DQS[7:0], DQM[7:0],
TLA[1:0]
DDRCLK
Table 7-7. DC Characteristics (Continued)
-24.0
-24.0
-24.0
-16.0
-15.2
-10.0
-500
Min
-3.0
-3.0
-3.0
-3.0
-3.0
-3.0
-5.0
-11
50
50
50
50
N/A
N/A
N/A
Max
150
150
150
150
3.0
3.0
3.0
3.0
3.0
3.0
5.0
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
---
---
---
33234H
Comments
I
If V
I
These pull-downs are only
enabled during reset or
power sequencing system
behaviors. Note 2.
V
Note 2
drive set for pad
I
ter-drive set for pad
LEAK
OH
OH
O
IH
= V
min = -11 mA with half-
min = -8 mA with quar-
> V
max = 20 µA
OH
IO
(Min)
,
605