FS10R12VT3 Infineon Technologies, FS10R12VT3 Datasheet

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FS10R12VT3

Manufacturer Part Number
FS10R12VT3
Description
IGBT Modules N-CH 1.2KV 16A
Manufacturer
Infineon Technologies
Datasheet
1.FS10R12VT3.pdf (8 pages)

Specifications of FS10R12VT3

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
16 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY750
Ic (max)
10.0 A
Vce(sat) (typ)
1.9 V
Technology
IGBT3
Housing
EasyPACK 750
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FS10R12VT3
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FS10R12VT3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
1+
8
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7
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FS10R12VT3 Summary of contents

Page 1

... D ! " " " " FS10R12VT3 Vorläufige Daten / preliminary data %&' ( )*+ %- ( *+2 %& )*+2 %& )*+2 %& ,@. ( ,@. ( #72 ,-. ( ,@.2 %&' ( )*+ ,@. ( 0) , A0) , %&' ( )*+ ( 0 O92 %&' ( )*+2 ,-. ( ) ,2 ,@. ( ( 0 O92 %&' ( )*+2 ,-. ( ) ,2 ,@. ( ,-. ( 0 ,2 ,@. ( ,2 %&' ( )*+ ,-. ( ,2 ,@. ( ,2 %&' ( )*+ - ( 0 72 ,-. ( 6 , ,@. ( Y0 ,-. ( 6 , ,@. ( Y0 ,-. ( 6 , ,@. ( Y0) , L@4 ,-. ( 6 , ,@. ( Y0) , L@4 ,-. ( 6 , ,@. ( Y0 L@ ,-. ( 6 , ,@. ( Y0 L@4 ,@. ^ 0) , %& )*+2 ,-- ( G ,2 ,-.5F_ ( ,-./ WE ...

Page 2

... Technische Information / technical information IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values Charakteristische Werte / characteristic values FS10R12VT3 %&' ( )*+ : ( %& )*+ ,@. ( , ,@. ( , 7BK ,; ( 6 , ,@. ( 7BK ,; ( 6 , ,@. ( 7BK ,; ( 6 , ,@. ( d:FE> ?BV deTPFEP ( 0 ?BV Vorläufige Daten preliminary data ,;;< g;< h HH2 # # C %&' ( )*+ 026 %& )*+ 026) %&' ( )*+ 062 %& ...

Page 3

... Technische Information / technical information IGBT-Module IGBT-modules Modul / module With additional insulation of the mounting clamp higher values of creepage and clearance distances to the heatsink can be achieved. For more information call your responsible sales representative. FS10R12VT3 O92 ( )*+ Vorläufige Daten preliminary data ,j/ mno ) WE-. ...

Page 4

... V,@. V,@. V,@. V,@.X ,-. ( ,-. ( ,-. ( ,-. ( , , , , 20 18 %&' ( )*+ %& )*+ ,@. v,w FS10R12VT3 V,-. V,-. V,-. V,-.X %& )*+ %& )*+ %& )*+ %& )*+ 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5 " -X2 "4 " -X2 "4 " ...

Page 5

... LS !=D LS !=D LS != V,-. V,-. V,-. V,-.X ,@. ( Y0) ,2 L@4[[ ( ,@. ( Y0) ,2 L@4[[ ( ,@. ( Y0) ,2 L@4[[ ( ,@. ( Y0) ,2 L@4 %& )*+ N2 %& )*+ N2 %& )*+ N2 %& )*+ 200 400 600 800 ,-. v,w FS10R12VT3 x>Ibf ( V X x>Ibf ( V X x>Ibf ( V X x>Ibf ( 0,1 300 350 400 0,001 % ? VL $n7X % ? VL $n7X % ? VL $n7X % ? VL $n7X ...

Page 6

... V X x>Ibf ( V X x>Ibf ( V X x>Ibf ( x>Ibf B 0,1 0,001 0,01 0 FS10R12VT3 "TPi ( VL@X "TPi ( VL@X "TPi ( VL@X "TPi ( VL ,-. ( ,-. ( ,-. ( ,-. ( 6 1,0 0,8 0,6 0,4 0,2 0,0 50 100 ? ? ? ? Vorläufige Daten preliminary data ...

Page 7

... Technische Information / technical information IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines FS10R12VT3 7 Vorläufige Daten preliminary data ...

Page 8

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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