MC10LVEP11DG ON Semiconductor, MC10LVEP11DG Datasheet - Page 3

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MC10LVEP11DG

Manufacturer Part Number
MC10LVEP11DG
Description
IC BUFFER FANOUT ECL 1:2 8SOIC
Manufacturer
ON Semiconductor
Type
Fanout Buffer (Distribution)r
Datasheet

Specifications of MC10LVEP11DG

Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
Yes/Yes
Input
CML, LVDS, PECL
Output
ECL, PECL
Frequency - Max
3GHz
Voltage - Supply
2.375 V ~ 3.8 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
3GHz
Number Of Outputs
4
Max Input Freq
3000 MHz (Typ)
Propagation Delay (max)
0.31 ns @ 2.375V to 3.8V
Supply Voltage (max)
- 3.8 V or 3.8 V
Supply Voltage (min)
- 2.375 V or 2.375 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC10LVEP11DGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC10LVEP11DG
Manufacturer:
ON Semiconductor
Quantity:
128
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 3. MAXIMUM RATINGS
V
V
V
I
T
T
q
q
q
q
q
T
q
Symbol
out
A
stg
JA
JC
JA
JC
JA
sol
JC
CC
EE
I
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Wave Solder
Thermal Resistance (Junction−to−Case)
Parameter
Pb−Free
Pb
http://onsemi.com
V
V
V
V
Continuous
Surge
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
(Note 2)
EE
CC
EE
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
3
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
DFN8
DFN8
DFN8
I
I
v V
w V
Condition 2
CC
EE
−65 to +150
−40 to +85
41 to 44
41 to 44
35 to 40
Rating
100
190
130
185
140
129
265
265
−6
−6
50
84
6
6
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
mA
°C
°C
°C
V
V
V
V

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