CAT5114ZD7I10GT3 ON Semiconductor, CAT5114ZD7I10GT3 Datasheet - Page 2

IC POT DIGITAL 10K 32TAP 8TDFN

CAT5114ZD7I10GT3

Manufacturer Part Number
CAT5114ZD7I10GT3
Description
IC POT DIGITAL 10K 32TAP 8TDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT5114ZD7I10GT3

Taps
32
Resistance (ohms)
10K
Number Of Circuits
1
Temperature Coefficient
300 ppm/°C Typical
Memory Type
Non-Volatile
Interface
Up/Down
Voltage - Supply
2.5 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-VFDFN Exposed Pad
Resistance In Ohms
10K
Number Of Pots
Single
Taps Per Pot
32
Resistance
10 KOhms
Wiper Memory
Non Volatile
Digital Interface
Serial (3-Wire)
Operating Supply Voltage
3.3 V or 5 V
Supply Current
0.1 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
6 V
Supply Voltage (min)
2.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
CAT5114ZD7I-10-G
CAT5114ZD7I-10-GT3TR
CAT5114ZD7I-10-GT3TR
CAT5114ZD7I-10-GTR
CAT5114ZD7I-10-GTR
CAT5114ZD7I10GT3TR
Functional Diagram
U/D
INC
CS
R = Resistance:
L = Assembly Location
4 = Lead Finish − NiPdAu
B = Product Revision (Fixed as “B”)
CAT5114L = Device Code (PDIP)
CAT5114V = Device Code (SOIC)
T = Temperature Range (Industrial)
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
XXXX = Last Four Digits of Assembly Lot Number
2 = 10 kW
4 = 50 kW
5 = 100 kW
CAT5114LT
YMXXXX
Power On
Figure 1. General
PDIP
Memory
Control
Recall
GND
V
and
RL4B
CC
CAT5114VT
YMXXXX
SOIC
R
R
R
GND
H
W
L
V
U/D
INC
RL4B
/V
/V
CS
/V
CC
L
H
W
DEVICE MARKING INFORMATION
Nonvolatile
Store and
Up/Down
Memory
Circuitry
Counter
Control
Recall
5−Bit
5−Bit
http://onsemi.com
ABMS = CAT5114ZI−10−GT3
ABMT = CAT5114ZI−50−GT3
ABTH = CAT5114ZI−00−GT3
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
P = Product Revision
TDFN
2
XXX
Figure 2. Detailed
EFL
Decoder
YM
Position
MSOP
ABMS
32−
YMP
31
30
29
28
2
1
0
EF = CAT5114VP2I10GT3
GV = CAT5114VP2I50GT3
GW = CAT5114VP2I00GT3
L = Assembly Location
XXX = Last Three Digits of Assembly Lot Number
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
Transfer
Gates
Resistor
Array
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
B = Product Revision (Fixed as “B”)
R = Resistance:
5114G = Device Code
T = Temperature Range
2 = 10 kW
4 = 50 kW
5 = 100 kW
R
R
L
R
W
/V
TSSOP
H
5114GT
/V
L
/V
YMBR
Figure 3. Electronic
W
H
Implementation
Potentiometer
R
R
R
W
H
L
/V
/V
/V
W
H
L

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