CAT5114ZD7I10GT3 ON Semiconductor, CAT5114ZD7I10GT3 Datasheet - Page 7

• Manufacturer Part Number: CAT5114ZD7I10GT3
• Description: IC POT DIGITAL 10K 32TAP 8TDFN
• Manufacturer: ON Semiconductor

Specifications of CAT5114ZD7I10GT3

• Taps: 32
• Resistance (ohms): 10K
• Number Of Circuits: 1
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: Up/Down
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Resistance In Ohms: 10K
• Number Of Pots: Single
• Taps Per Pot: 32
• Resistance: 10 KOhms
• Wiper Memory: Non Volatile
• Digital Interface: Serial (3-Wire)
• Operating Supply Voltage: 3.3 V or 5 V
• Supply Current: 0.1 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 6 V
• Supply Voltage (min): 2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CAT5114ZD7I-10-G; CAT5114ZD7I-10-GT3TR; CAT5114ZD7I-10-GT3TR; CAT5114ZD7I-10-GTR; CAT5114ZD7I-10-GTR; CAT5114ZD7I10GT3TR

Applications
CAT5113/5114
2
7
1
SHUTDOWN
2
7
+5 V
1
DPP
V
4
V
V
+5 V
DPP
Figure 9. Programmable Voltage Regulator
1
4
2
IN
8
Figure 7. Programmable Instrumentation
(−)
(+)
8
(UNREG)
CAT5113/5114
3
2
6
5
1 mF
SD
R
+
–
–
+
100 kW
1
2952
GND
R
R
(a) resistive divider
2
Amplifier
2
V
A
A
OUT
1
2
FB
1
7
5
1.23 V
A
R
R
R
R
1
2
POT
3
3
= A
= R
= 10 kW
2
3
3
6
11 kW
R
10
= A
R
820 W
R
10 kW
= R
9
1
2
3
Figure 6. Potentiometer Configuration
3
–
+
4
+5 V
=
= 5 kW
R
R
1
4
4
/
0.1 mF
4
4
11
Applications Information
LM6064
A
3
(b) variable resistance
8
http://onsemi.com
6.8 mF
+2.5 V
V
O
V
O
I
S
7
(REG)
CAT5114
2
7
1
+5 V
DPP
4
Figure 8. Programmable Sq. Wave Oscillator (555)
2
3
8
330 W
+
–
R
Figure 10. Programmable I to V Convertor
+5 V
R
B
A
2
7
1
7
4
C
+5 V
DPP
4
6
pR (1−p)R
A
8
6
6
3
1
R
R
5
0.01 mF
0.003 mF
CAT5113/5114
1
2
5
10 k
(c) two−port
(1−p)R
pR
3
POT
330 W
POT
7
6
4
2
3
2
LT1097
555
–
+
+5 V
1 MW
4
1
7
8
3
5
6
A
2
+5 V
0.01 mF
+2.5 V
V
O