K4S641632HUC75 Samsung Semiconductor, K4S641632HUC75 Datasheet - Page 11

• Manufacturer Part Number: K4S641632HUC75
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S641632HUC75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
AC CHARACTERISTICS
Notes :
Notes :
SDRAM 64Mb H-die (x4, x8, x16)
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Output rise time
Output fall time
Output rise time
Output fall time
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
Parameter
1. Rise time specification based on 0pF + 50 Ω to V
2. Fall time specification based on 0pF + 50 Ω to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
trh
tfh
tfh
(AC operating conditions unless otherwise noted)
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Symbol
Condition
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
SS
.
DD
Min
SS
2.5
2.5
2.5
1.5
6
1
1
-
-
, use these values to design to.
, use these values to design to.
60
1000
Max
1.37
1.30
Min
2.8
2.0
5
5
-
-
Min
7
3
3
3
2
1
1
-
-
Typ
3.9
2.9
70
1000
Max
6
6
-
-
Max
4.37
3.8
5.6
5.0
Min
7.5
2.5
2.5
1.5
0.8
10
Rev. 1.3 August 2004
3
3
1
CMOS SDRAM
75
Volts/ns
Volts/ns
Volts/ns
Volts/ns
1000
Max
5.4
5.4
Unit
6
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,2
1,2
3
3
Note
1,2
1
2
3
3
3
3
2