MT47H128M16RT-25E IT:C Micron Technology Inc, MT47H128M16RT-25E IT:C Datasheet - Page 100

• Manufacturer Part Number: MT47H128M16RT-25E IT:C
• Manufacturer: Micron Technology Inc

Specifications of MT47H128M16RT-25E IT:C

• Lead Free Status / Rohs Status: Compliant

Figure 53: Bank Read – Without Auto Precharge
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Bank address
Case 1: t AC (MIN) and t DQSCK (MIN)
DQS, DQS#
DQS, DQS#
Command
Case 2: t AC (MAX) and t DQSCK (MAX)
Address
DQ 8
DQ 8
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. The PRECHARGE command can only be applied at T6 if
4. READ-to-PRECHARGE = AL + BL/2 - 2CK + MAX (
5. Disable auto precharge.
6. “Don’t Care” if A10 is HIGH at T5.
7. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
8. DO n = data-out from column n; subsequent elements are applied in the programmed
these times.
but to when the device begins to drive or no longer drives, respectively.
order.
t CK
t RAS 3
t RCD
t RC
NOP 1
T2
t CH
t CL
NOP 1
T3
Bank x
READ 2
5
Col n
100
T4
CL = 3
t RTP 4
NOP 1
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t LZ (MIN)
t LZ (MAX)
One bank
All banks
2Gb: x4, x8, x16 DDR2 SDRAM
Bank x 6
7
PRE 3
T6
7
t
t RPRE
RTP/
t LZ (MIN)
t LZ (MIN)
t RPRE
t
Transitioning Data
CK or 2CK).
t
NOP 1
RAS (MIN) is met.
T7
t DQSCK (MAX)
t DQSCK (MIN)
t RP
DO
n
t AC (MIN)
t AC (MAX)
DO
© 2006 Micron Technology, Inc. All rights reserved.
n
T7n
NOP 1
T8
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
Don’t Care
t RPST
Bank x
ACT
RA
T9
7
RA
7
READ