GT60M303 Toshiba, GT60M303 Datasheet - Page 2

• Manufacturer Part Number: GT60M303
• Manufacturer: Toshiba

Specifications of GT60M303

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 900V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3P(LH)
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Not Compliant

ELECTRICAL CHARACTERISTICS
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Switching Time
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
CHARACTERISTIC
Rise Time
Turn−On Time
Fall Time
Turn−Off Time
V
V
V
SYMBOL
CE (sat) (1)
CE (sat) (2)
R
R
GE (OFF)
V
I
I
th (j−c)
th (j−c)
C
GES
CES
t
t
ECF
t
on
off
t
t
ies
rr
r
f
(Ta = 25
V
V
I
I
I
V
I
I
di / dt = −20A / μs
IGBT
Diode
C
C
C
EC
F
GE
CE
CE
= 15A, V
= 60mA, V
= 10A, V
= 60A, V
= 15A, V
= ±25V, V
= 900V, V
= 10V, V
2
°C
TEST CONDITION
)
GE
GE
GE
GE
CE
GE
= 0
GE
CE
= 15V
= 15V
= 0
= 5V
= 0, f = 1MHz
= 0
= 0
MIN
3.0
―
―
―
―
―
―
―
―
―
―
―
―
―
TYP.
3800
0.35
0.46
0.25
0.60
1.6
2.1
1.5
0.7
―
―
―
―
―
GT60M303
2006-11-01
±500
MAX
0.60
0.75
0.40
0.70
0.74
1.0
6.0
2.2
2.7
2.0
2.5
4.0
―
°C / W
°C / W
UNIT
mA
nA
pF
μs
μs
V
V
V
V