DS1220Y-200IND+ Dallas Semiconductor, DS1220Y-200IND+ Datasheet
DS1220Y-200IND+
Specifications of DS1220Y-200IND+
Related parts for DS1220Y-200IND+
DS1220Y-200IND+ Summary of contents
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... The NV SRAM can be used in place of existing SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature Caution: Do Not Reflow This is a stress rating only and functional operation of the device at these or any other conditions above those ...
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... DH1 10 t DH2 (T A DS1220Y-120 DS1220Y-150 MAX MIN MAX MIN 120 150 100 120 50 60 100 120 120 150 90 100 See Note 10; V =5.0V ± 10%) CC DS1220Y-200 UNITS MAX MIN MAX 200 ns 150 200 ns 70 100 ns 150 200 200 ns 150 NOTE ...
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POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER before Power-Down IH V Slew from Slew from after Power-Up IH PARAMETER Expected Data Retention ...
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... DS1220Y-150+ 0°C to +70°C DS1220Y-200 0°C to +70°C DS1220Y-200+ 0°C to +70°C DS1220Y-200IND -40°C to +85°C DS1220Y-200IND+ -40°C to +85°C + Denotes a lead-free/RoHS-compliant package. is defined as starting at the date TEST CONDITIONS Output Load: 100pF + 1TTL Gate Input Pulse Levels: 0-3.0V Timing Measurement Reference Levels Input:1 ...