BFY640B (P) Infineon Technologies, BFY640B (P) Datasheet - Page 3

• Manufacturer Part Number: BFY640B (P)
• Description: RF Germanium NPNSilicon Germanium RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY640B (P)

• Lead Free Status / Rohs Status: No
• Other names: BFY640BPNZ

Micro-X Package
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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Edition 2010-06
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
V1, June 2010
BFY640