BYV29FD-600,118 NXP Semiconductors, BYV29FD-600,118 Datasheet

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BYV29FD-600,118

Manufacturer Part Number
BYV29FD-600,118
Description
DIODE UFAST 600V 9A SOT428
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BYV29FD-600,118

Voltage - Forward (vf) (max) @ If
1.9V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
9A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Enhanced ultrafast power diode in a SOT428 (DPAK) surface-mountable plastic package.
Table 1.
Symbol
V
I
Static characteristics
V
Dynamic characteristics
t
F(AV)
rr
RRM
F
BYV29FD-600
Enhanced ultrafast power diode
Rev. 01 — 7 March 2011
High thermal cycling performance
Low on-state losses
Low thermal resistance
Dual mode (DCM and CCM) Power
Factor Correction (PFC)
Power Factor Correction (PFC) for
Interleaved Topology
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
forward voltage
reverse recovery
time
Conditions
square-wave pulse; δ = 0.5 ;
T
see
I
I
I
dI
see
F
F
F
mb
F
= 8 A; T
= 8 A; T
= 1 A; V
/dt = 100 A/µs; T
Figure 2
Figure 6
≤ 115 °C; see
j
j
R
= 25 °C; see
= 150 °C; see
= 30 V;
Figure
j
= 25 °C;
Soft recovery characteristic
Surface-mountable package
U-inverter (DC-AC converter for
individual solar panels)
Figure 5
1;
Figure 5
Min
-
-
-
-
-
Product data sheet
Typ
-
-
1.45 1.9
1.25 1.7
17.5 35
Max Unit
600
9
V
A
V
V
ns

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BYV29FD-600,118 Summary of contents

Page 1

... BYV29FD-600 Enhanced ultrafast power diode Rev. 01 — 7 March 2011 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits High thermal cycling performance Low on-state losses Low thermal resistance 1.3 Applications Dual mode (DCM and CCM) Power ...

Page 2

... ms; sine-wave pulse see Figure 8.3 ms; sine-wave pulse °C; see Figure 3 j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode Graphic symbol mb K 001aaa020 2 3 Version SOT428 Min Max - 600 - 600 - 600 ≤ ...

Page 3

... Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values BYV29FD-600 Product data sheet 003aae718 δ 0 (A) F(AV) Fig All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode 16 P tot (W) 12 2.2 2.8 4 Forward power dissipation as a function of average forward current ...

Page 4

... Figure 4 in free air 10 Z th(j-mb) (K/W) 1 − −2 10 −3 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode Min Typ - - - 60 001aag913 t p δ − (s) p Max Unit 2 ...

Page 5

... Figure /dt = 100 A/µ see Figure /dt = 100 A/µs; see F F 003aad323 (V) F Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode Min Typ - 1.45 Figure 17.5 - 1.5 Figure Reverse recovery definitions ...

Page 6

... NXP Semiconductors Fig 7. Forward recovery definitions BYV29FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode time V FRM V F time 001aab912 © NXP B.V. 2011. All rights reserved ...

Page 7

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...

Page 8

... All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode 1.80 4.725 6.50 6.125 0.30 1.30 1.40 1.65 SOT428 © NXP B.V. 2011. All rights reserved. ...

Page 9

... NXP Semiconductors 9. Revision history Table 7. Revision history Document ID Release date BYV29FD-600 v.1 20110307 BYV29FD-600 Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode ...

Page 10

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode © NXP B.V. 2011. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 March 2011 BYV29FD-600 Enhanced ultrafast power diode © NXP B.V. 2011. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 March 2011 Document identifier: BYV29FD-600 ...

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