BYV29FD-600,118 NXP Semiconductors, BYV29FD-600,118 Datasheet - Page 5

• Manufacturer Part Number: BYV29FD-600,118
• Description: DIODE UFAST 600V 9A SOT428
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BYV29FD-600,118

• Voltage - Forward (vf) (max) @ If: 1.9V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 9A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
Table 6.
BYV29FD-600
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
Fig 5.
F
FR
r
I
F
(A)
20
16
12
8
4
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery voltage
1
(1)
(2)
2
(3)
All information provided in this document is subject to legal disclaimers.
003aad323
V
F
Conditions
I
I
V
V
see
I
T
I
see
I
I
(V)
F
F
F
F
F
F
j
R
R
= 8 A; T
= 8 A; T
= 1 A; V
= 1 A; V
= 25 °C; see
= 1 A; V
= 1 A; dI
= 600 V; T
= 600 V; T
Figure 6
Figure 6
3
Rev. 01 — 7 March 2011
j
j
R
R
R
F
= 25 °C; see
= 150 °C; see
/dt = 100 A/µs; see
= 30 V; dI
= 30 V; dI
= 30 V; dI
j
j
= 100 °C
= 25 °C
Figure 6
Fig 6.
I
I
R
F
F
F
F
/dt = 100 A/µs;
/dt = 100 A/µs;
/dt = 100 A/µs;
Figure 5
Figure 5
Reverse recovery definitions; ramp recovery
dl
dt
Figure 7
F
I
RM
Q
r
Enhanced ultrafast power diode
t
rr
BYV29FD-600
Min
-
-
-
-
-
-
-
-
Typ
1.45
1.25
-
-
13
17.5
1.5
3.2
© NXP B.V. 2011. All rights reserved.
Max
1.9
1.7
1.5
50
-
35
-
-
25 %
003aac562
time
Unit
V
V
mA
µA
nC
ns
A
V
100 %
5 of 12