IPD50N06S3L-13 Infineon Technologies

MOSFET Power OPTIMOS-T N-CH 55V 50A 13mOhms

IPD50N06S3L-13

Manufacturer Part Number

IPD50N06S3L-13

Description

MOSFET Power OPTIMOS-T N-CH 55V 50A 13mOhms

Manufacturer

Infineon Technologies

Specifications of IPD50N06S3L-13

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

13 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

50 A

Power Dissipation

65 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Fall Time

103 ns

Minimum Operating Temperature

- 55 C

Rise Time

51 ns

Lead Free Status / Rohs Status

Details

Other names

IPD50N06S3L13XT

Related parts for IPD50N06S3L-13

Related keywords

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