OP750C TT Electronics/Optek Technology, OP750C Datasheet
OP750C
Manufacturer Part Number
OP750C
Description
PHOTOTRNS NPN W/RES SIDE LOOK
Manufacturer
TT Electronics/Optek Technology
Datasheet
1.OP750A.pdf
(2 pages)
Specifications of OP750C
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
30mA
Current - Dark (id) (max)
100nA
Wavelength
935nm
Viewing Angle
-
Power - Max
200mW
Mounting Type
Through Hole
Orientation
Side View
Package / Case
Radial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Prod uct Bul le tin OP750A
June 1999
NPN Pho to tran sis tor with Base- Emitter Resistor
Types OP750A, OP750B, OP750C, OP750D
Fea tures
De scrip tion
The OP750 series devices consist of an
NPN silicon phototransistor molded in a
clear epoxy package. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy
PC board mounting of slotted optical
switches or optical interrupt detectors.
This series is mechanically and
spectrally matched to the OP140 and
OP240 series of infrared emitting
diodes.
The phototransistor has an internal
base-emitter resistor which provides
protection from low level ambient
lighting conditions. This feature is also
useful when the media being detected is
semi-transparent to infrared light in
interruptive applications.
Op tek Tech nol ogy, Inc.
Wide receiving angle
Variety of sensitivity ranges
Side-looking package for space
limited applications
Base-emitter resistor provides
ambient light protection
1215 W. Crosby Road
Ab so lute Maxi mum Rat ings (T
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
NOTES:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 1.33 mW/
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
(4) The knee point irradiance is defined as the irradiance required to increase I
Typi cal Per form ance Curves
Max. 20 grams force may be applied to leads when soldering.
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
Typi cal Spec tral Re sponse
Car roll ton, Texas 75006
Wave length - nm
3-42
o
C above 25
A
o
= 25
C.
(972)323- 2200
o
C un less oth er wise noted)
Sche matic
Fax (972)323-2396
C(ON)
o
C to +100
to 50 A.
o
C
o
(1)
(2)
C
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OP750C Summary of contents
Page 1
... Prod uct Bul le tin OP750A June 1999 NPN Pho to tran sis tor with Base- Emitter Resistor Types OP750A, OP750B, OP750C, OP750D Fea tures Wide receiving angle Variety of sensitivity ranges Side-looking package for space limited applications Base-emitter resistor provides ambient light protection ...
Page 2
... Types OP750A, OP750B, OP750C, OP750D Elec tri cal Char ac ter is tics ( SYM BOL PA RAME TER On-State Collector Current I C(ON) E Knee Point Irradiance Collector-Emitter Dark Current CEO I Emitter-Reverse Current ECO V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Emitter Saturation Voltage CE(SAT) Typi cal Per form ance Curves Normalized Collector Current vs ...