SJEP120R100 SEMISOUTH, SJEP120R100 Datasheet - Page 3

• Manufacturer Part Number: SJEP120R100
• Description: JFET, SIC, N-OFF, 1200V, 17A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 17A

SJEP120R100 Rev2.1
10.00
1.00
0.10
0.01
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
40
30
20
10
15
12
0
9
6
3
0
2.0
0
0
Figure 5. Gate-Source Current
I
I
D
D
= f(V
= f(V
V
V
DS
1
V
DS
I
, Drain-Source Voltage (V)
DS
GS
GS
DS
, Drain-Source Voltage (V)
); T
, Gate-Source Voltage (V)
); T
= f(V
j
2.5
j
= 150 ° C; parameter: V
2
2
= 25 ° C; parameter: V
GS
); parameter: T
3
3.0
4
4
j
GS
GS
150
5
3.0 V
1.5 V
25
2.5 V
2.0 V
3.0 V
2.5 V
2.0 V
1.5 V
o
o
C
C
3.5
6
6
PRELIMINARY
3/8
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
35
30
25
20
15
10
20
15
10
5
0
5
0
0.00
I
0
R
D
0
DS(on)
= f(V
DS
V
0.50
= f(I
V
DS
I
GS
); T
D
4
, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
= f(V
D
); V
j
= 100 ° C; parameter: V
I
D
1.00
GS
GS
, Drain Current (A)
2
SJEP120R100
); V
= 3.0; parameter: Tj
8
Silicon Carbide
DS
1.50
= 5 V
12
2.00
150
4
February 2011
o
C
GS
2.50
16
1.5 V
2.5 V
2.0 V
3.0 V
100
25
3.00
o
o
C
C
20
6