SJEP120R100 SEMISOUTH, SJEP120R100 Datasheet - Page 5

• Manufacturer Part Number: SJEP120R100
• Description: JFET, SIC, N-OFF, 1200V, 17A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 17A

SJEP120R100 Rev2.1
The SGDR300P1 is a gate driver reference design available for purchase from SemiSouth. See applications note AN-SS2 for full circuit
description, test results, schematics, and bill of materials. Gerber files also available upon request.
300
250
200
150
100
E
50
s
0
Figure 13. Switching Energy Losses
= f(I
2
D
Tj = 25
Tj = 150
); V
DS
= 600V; GD = +15V/-15V, R
o
C
o
C
6
I
D
, Drain Current (A)
SGDR300P1
10
Figure 15. Gate Driver & Switching Test Circuit
Figure 16. Test Circuit & Test Conditions
14
GEXT
= 5ohm
E
E
E
TS
OFF
ON
18
PRELIMINARY
5/8
E
Test Conditions
s
Figure 14. Switching Energy Losses
600
500
400
300
200
100
= f(R
0
Single Device configuration
V
RC snubber: R= 22 and C = 4.7nF
400uH load inductance
Each device driven by separate SGD300P1
Gate driver approx. 5mm from gate terminal
3.3nF gate-source capacitive clamp
DD
0
GEXT
= 600V, I
Tj = 25
Tj = 150
Rg
); V
EXT
DS
, External Gate Resistance, ( )
= 600V; I
o
10
C
o
C
LPK
= 12A, T
SJEP120R100
D
Silicon Carbide
= 12A, GD = +15V/-15V
20
A
= 25
o
C
February 2011
30
E
E
E
OFF
ON
TS
40