EPC2014 EPC, EPC2014 Datasheet
EPC2014
Manufacturer Part Number
EPC2014
Description
TRANS GAN 40V 10A BUMPED DIE
Manufacturer
EPC
Series
eGaN™r
Datasheet
1.EPC2014.pdf
(4 pages)
Specifications of EPC2014
Mfg Application Notes
Second Generation eGaN® FETs
Fet Type
GaNFET N-Channel, Gallium Nitride
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 5V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.5V @ 2mA
Gate Charge (qg) @ Vgs
2.8nC @ 5V
Input Capacitance (ciss) @ Vds
325pF @ 20V
Power - Max
-
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
917-1018-1
eGaN® FET DATASHEET
V
R
I
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
EPC2014 – Enhancement Mode Power Transistor
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low R
and majority carrier diode provide exceptionally low Q
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
D
DSS
DS(ON)
Static Characteristics (T
Dynamic Characteristics (T
Source-Drain Characteristics (T
, 10 A
T
V
V
I
T
STG
D
, 40 V
DS
GS
J
R
V
BV
Q
C
C
Q
, 16 mW
C
Q
Q
I
I
DS(ON)
V
GS(TH)
Q
DSS
GSS
OSS
RSS
OSS
ISS
SD
GD
GS
DSS
RR
G
Drain-to-Source Voltage
Continuous (T
Pulsed (25˚C, t
Gate-to-Source Voltage
Negative Gate-to-Source Voltage
Operating Temperature
Storage Temperature
Source-Drain Recovery Charge
Gate-Source Forward Leakage
Source-Drain Forward Voltage
PARAMETER
Gate-Source Reverse Leakage
Reverse Transfer Capacitance
Drain-Source On Resistance
Drain-to-Source Voltage
Gate Threshold Voltage
A
pulse
Gate to Source Charge
J
Drain Source Leakage
= 25˚C unless otherwise stated)
Gate to Drain Charge
= 25˚C, θ
Output Capacitance
Input Capacitance
Total Gate Charge
= 300 µs)
J
Output Charge
= 25˚C unless otherwise stated)
J
= 25˚C unless otherwise stated)
JA
= 50)
Maximum Ratings
NEW PRODUCT
G
and zero Q
I
V
S
I
S
DS
= 0.5 A, V
= 0.5 A, V
DS(ON)
= 20 V, V
V
V
V
V
V
GS
V
DS
DS
DS
TEST CONDITIONS
DS
-40 to 150
-40 to 150
, while its lateral device structure
RR
GS
= 0 V, I
= 20 V, I
= 32 V, V
= 20 V, V
= V
. The end result is a device that
= 5 V, I
V
V
40
10
40
-5
GS
6
GS
GS
GS
GS
GS
= -5 V
, I
= 5 V
= 0 V, T = 125˚C
= 0 V, T = 25˚C
D
= 5 V, I = 10 A
D
= 125 µA
D
D
= 2 mA
GS
GS
= 5 A
= 10 A
= 0 V
= 0 V
D
˚C
V
A
V
MIN
0.7
40
EFFICIENT POWER CONVERSION
EPC2014 eGaN® FETs are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low R
• Ultra low Q
• Ultra small footprint
0.67
10.2
2.48
0.48
300
150
TYP
0.4
0.1
1.4
4.8
1.3
1.4
50
12
0
G
DS(on)
12.5
MAX
100
325
170
0.6
0.8
0.5
2.5
2.8
16
6
2
HAL
EPC2014
UNIT
| PAGE 1
mΩ
mA
µA
pF
nC
V
V
V
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EPC2014 Summary of contents
Page 1
... 0 25˚ 0 125˚ EFFICIENT POWER CONVERSION HAL EPC2014 eGaN® FETs are supplied only in passivated die form with solder bumps Applications V • High Speed DC-DC conversion • Class D Audio A • Hard Switched and High Frequency Circuits Benefits • Ultra High Efficiency V • Ultra Low R DS(on) • Ultra low Q G ˚C • Ultra small footprint ...
Page 2
... V – Gate to Source Voltage (V) GS Figure 4: R vs. V for Various Temperatures DS(ON 2.5 3 3.5 4 4.5 V – Gate to Source Voltage (V) GS Figure 6: Gate Charge 0.5 1 1.5 Q – Gate Charge (nC) G EPC2014 3 3.5 4 25˚C 125˚C 5 5.5 2 2.5 | PAGE 2 ...
Page 3
... EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | 2.5 3 3.5 -20 .03 .025 .02 .015 .01 .005 0 100 120 140 160 EPC2014 (note 1) target min max a 8.00 7.90 8.30 b 1.75 1.65 1.85 3.50 3.45 3.55 d 4.00 3.90 4.10 e 4.00 3.90 4 ...
Page 4
... YYYY ZZZZ MICROMETERS DIM MIN Nominal MAX A 1672 1702 1732 B 1057 1087 1117 c 834 837 840 d 327 330 333 e 235 250 265 f 195 200 205 g 400 400 400 1702 180 180 X3 Information subject to change without notice. revised August 2011 EPC2014 | PAGE 4 ...