EPC2014 EPC, EPC2014 Datasheet - Page 4

• Manufacturer Part Number: EPC2014
• Description: TRANS GAN 40V 10A BUMPED DIE
• Manufacturer: EPC
• Series: eGaN™r

Specifications of EPC2014

• Mfg Application Notes: Second Generation eGaN® FETs
• Fet Type: GaNFET N-Channel, Gallium Nitride
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 5V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.5V @ 2mA
• Gate Charge (qg) @ Vgs: 2.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 325pF @ 20V
• Power - Max: -
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 917-1018-1

eGaN® FET DATASHEET
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
DIE MARKINGS
DIE OUTLINE
Solder Bar View
Side View
RECOMMENDED
LAND PATTERN
(measurements in µm)
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to
improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
The land pattern is solder mask defined
Solder mask is 10um smaller per side than bump
Pad no. 1 is Gate
Pad no. 2 is Substrate
Pad no. 3 and 5 are Drain
Pad no. 4 is Source
Die orientation dot
Gate Pad bump is
under this corner
e
1
2
1
2
f
400
g
3
3
A
SEATING PLANE
4
X3
4
f
2014
YYYY
ZZZZ
400
X2
X2
g
5
5
EPC2014
Number
Part
Marking Line 1
180
Part #
1
2
2014
DIM
A
B
d
e
g
c
f
3
Laser Markings
Lot_Date Code
Marking line 2
1672
1057
MIN
834
327
235
195
400
1702
YYYY
MICROMETERS
Nominal
4
1702
1087
837
330
250
200
400
Lot_Date Code
Marking Line 3
ZZZZ
change without notice.
180
X3
Information subject to
5
revised August 2011
MAX
1732
1117
840
333
265
205
400
EPC2014
| PAGE 4