CY7C1327B-166AC Cypress Semiconductor Corp, CY7C1327B-166AC Datasheet

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CY7C1327B-166AC

Manufacturer Part Number
CY7C1327B-166AC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1327B-166AC

Density
4Mb
Access Time (max)
3.5ns
Operating Supply Voltage (typ)
3.3V
Package Type
TQFP
Operating Temp Range
0C to 70C
Supply Current
420mA
Operating Supply Voltage (min)
3.14V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05140 Rev. **
Features
Functional Description
The CY7C1327B is a 3.3V, 256K by 18 synchronous-pipelined
cache SRAM designed to support zero wait state secondary
cache with minimal glue logic.
Intel and Pentium are registered trademarks of Intel Corporation.
PowerPC is a trademark of IBM Corporation.
Logic Block Diagram
• Supports 100-MHz bus for Pentium
• Fully registered inputs and outputs for pipelined
• 256K by 18 common I/O architecture
• 3.3V core power supply
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous Output Enable
• JEDEC-standard 100 TQFP pinout
• “ZZ” Sleep Mode option and Stop Clock option
operations with zero wait states
operation
Pentium interleaved or linear burst sequences
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
— 5.5 ns (for 100-MHz device)
ADSP
ADSC
A
ADV
BWE
CE
CE
CE
[17:0]
GW
BW
BW
CLK
OE
ZZ
1
2
3
0
1
18
256K x 18 Synchronous-Pipelined Cache RAM
(A
MODE
[1;0]
and PowerPC™
)
3901 North First Street
16
2
D
D
D
CE
D
CE
CE
CLR
D
DQ[15:8], DP[1]
ENABLE DELAY
DQ[7:0], DP[0]
BYTEWRITE
BYTEWRITE
REGISTERS
REGISTERS
ENABLE CE
REGISTER
REGISTER
COUNTER
REGISTER
CONTROL
ADDRESS
SLEEP
BURST
Q
Q
Q
0
1
Q
Q
Q
Q
The CY7C1327B I/O pins can operate at either the 2.5V or the
3.3V level. The I/O pins are 3.3V tolerant when V
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. Max-
imum access delay from the clock rise is 3.5 ns (166-MHz
device).
The CY7C1327B supports either the interleaved burst se-
quence used by the Intel Pentium processor or a linear burst
sequence used by processors such as the PowerPC. The
burst sequence is selected through the MODE pin. Accesses
can be initiated by asserting either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC) at
clock rise. Address advancement through the burst sequence
is controlled by the ADV input. A 2-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte write operations are qualified with the four Byte Write
Select (BW
all byte write inputs and writes data to all four bytes. All writes
are conducted with on-chip synchronous self-timed write cir-
cuitry.
Three synchronous Chip Selects (CE
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to provide prop-
er data during depth expansion, OE is masked during the first
clock of a read cycle when emerging from a deselected state.
16
[1:0]
San Jose
) inputs. A Global Write Enable (GW) overrides
18
CLK
REGISTERS
OUTPUT
CA 95134
18
Revised September 6, 2001
MEMORY
256KX18
ARRAY
1
CY7C1327B
, CE
CLK
REGISTERS
2
, CE
408-943-2600
INPUT
DDQ
DQ
DP
18
3
) and an
[1:0]
[15:0]
=2.5V.

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CY7C1327B-166AC Summary of contents

Page 1

... PowerPC is a trademark of IBM Corporation. Cypress Semiconductor Corporation Document #: 38-05140 Rev. ** The CY7C1327B I/O pins can operate at either the 2.5V or the 3.3V level. The I/O pins are 3.3V tolerant when V and PowerPC™ All synchronous inputs pass through input registers controlled by the rising edge of the clock ...

Page 2

... Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Pin Configurations DDQ DDQ BYTE1 DDQ DDQ Document #: 38-05140 Rev. ** 7C1327-166 3.5 Commercial 420 Commercial 10 100-Lead TQFP CY7C1327B CY7C1327B 7C1327-133 7C1327-100 4.0 5.5 375 325 DDQ DDQ BYTE0 DDQ DDQ Page ...

Page 3

... DDQ ADV DDQ CLK BWE DDQ DQP MODE DDQ Description to select/deselect the device. ADSP is ignored select/deselect the device. to select/deselect the device. are also loaded into the burst counter. When ADSP and [1:0] CY7C1327B DDQ DQP DDQ DDQ DDQ DDQ , CE , and CE are sampled active. A ...

Page 4

... Max- imum access delay from the clock rise (t device). The CY7C1327B supports secondary cache in systems utiliz- ing either a linear or interleaved burst sequence. The inter- leaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 5

... Because the CY7C1327B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ and DP inputs. Doing so will three-state the [15:0] [1:0] output drivers safety precaution, DQ automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ...

Page 6

... Write is defined by BWE and GW. See Write Cycle Description table. [1:0] 3. The DQ pins are controlled by the current cycle and the OE signal asynchronous and is not sampled with the clock. Document #: 38-05140 Rev ADSP CY7C1327B ADSC ADV ...

Page 7

... Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA 65°C to +150°C Operating Range 55°C to +125°C 0.5V to +4.6V Range Com’l 0. 0. 0.5V Industrial –40°C to +85°C DD ;DP = data when OE is active. [15:0] [1:0] CY7C1327B ...

Page 8

... V – 0. DDQ 7.5-ns cycle, 133 MHz 1/t MAX CYC 10-ns cycle, 100 MHz Max Device Deselected Test Conditions MHz 3.3V 3.3V DDQ CY7C1327B Min. Max. Unit 3.135 3.6 V 2.375 3.6 V 2.4 V 2.0 V 0.4 V 0 –0.3 0.8 V –0.3 0.7 ...

Page 9

... EOLZ CHZ CLZ CY7C1327B [10] ALL INPUT PULSES 2.5V 90% 90% 10% GND 2.5 ns (c) -133 -100 Min. Max. Min. Max. 7.5 10 1.9 3.5 1.9 3.5 2 ...

Page 10

... GW to define a write cycle (see Write Cycle Description table). [1:0] 15. WDx stands for Write Data to Address X. Document #: 38-05140 Rev. ** Burst Write ADSP ignored with WD2 masks ADSP UNDEFINED = DON’T CARE CY7C1327B Pipelined Write Unselected inactive ADSC initiated write WD3 Unselected with CE 2 High Page ...

Page 11

... Note: 16. RDx stands for Read Data from Address X. Document #: 38-05140 Rev. ** Burst Read ADSP ignored with Suspend Burst ADH OEHZ t DOH CLZ = DON’T CARE = UNDEFINED CY7C1327B Unselected Pipelined Read inactive 1 ADSC initiated read RD3 masks ADSP Unselected with CHZ 2 Page ...

Page 12

... Data bus is driven by SRAM, but data is not guaranteed. Document #: 38-05140 Rev. ** Single Write Burst Read ADSP ignored with ADH RD3 masks ADSP EOHZ t DS See Note Out In = DON’T CARE = UNDEFINED CY7C1327B Unselected Pipelined Read inactive DOH Out Out Out Out t CHZ Page ...

Page 13

... CE is the combination of CE and CE . All chip selects need to be active in order to select the device Document #: 38-05140 Rev CYC CH WD1 t ADH t WES ADSP ignored with CE HIGH Out Out In = DON’T CARE = UNDEFINED CY7C1327B t CL WD2 WD3 WD4 t CEH t WEH D( DOH t CHZ Page ...

Page 14

... I/Os Notes: 20. Device must be deselected when entering “ZZ” mode. See Cycle Description table for all possible signal conditions to deselect the device. 21. I/Os are in three-state when exiting “ZZ” sleep mode. Document #: 38-05140 Rev ZZS I (active DDZZ Three-state CY7C1327B t ZZREC Page ...

Page 15

... Ordering Information Speed (MHz) Ordering Code 166 CY7C1327B-166AC CY7C1327B-166BGC 133 CY7C1327B-133AC CY7C1327B-133BGC CY7C1327B-133AI CY7C1327B-133BGI 100 CY7C1327B-100AC CY7C1327B-100BGC CY7C1327B-100AI CY7C1327B-100BGI Package Diagrams 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05140 Rev. ** Package Name Package Type A101 100-Lead Thin Quad Flat Pack ...

Page 16

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead FBGA ( 2.4 mm) BG119 CY7C1327B 51-85115 Page ...

Page 17

... Document Title: CY7C1327B 256K x 18 Synchronous-Pipelined Cache RAM Document Number: 38-05140 Issue REV. ECN NO. Date ** 109884 09/10/01 Document #: 38-05140 Rev. ** Orig. of Change Description of Change SZV Change from Spec number: 38-00935 to 38-05140 CY7C1327B Page ...

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