SI3455DV-T1 Vishay, SI3455DV-T1 Datasheet

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SI3455DV-T1

Manufacturer Part Number
SI3455DV-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI3455DV-T1

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
±3.5A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
TSOP
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3455DV-T1
Manufacturer:
SILICONIX
Quantity:
72 000
Part Number:
SI3455DV-T1
Manufacturer:
NICHICON
Quantity:
2 392
Part Number:
SI3455DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3455DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm
Document Number: 70194
S-50694—Rev. E, 18-Apr-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 5 sec.
DS
−30
30
(V)
Ordering Information: Si3455DV-T1
J
J
a
a
0.190 @ V
0.100 @ V
= 150_C)
= 150_C)
a
r
DS(on)
3 mm
GS
a
a
GS
(W)
= −4.5 V
= −10 V
P-Channel 30-V (D-S) MOSFET
Parameter
Parameter
a
Si3455DV-T1—E3 (Lead (Pb)-Free)
Top View
1
2
3
TSOP-6
2.85 mm
A
= 25_C UNLESS OTHERWISE NOTED)
6
5
4
I
D
"3.5
"2.5
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
(3) G
FEATURES
D TrenchFETr Power MOSFET
D Lead (Pb)-Free Version is RoHS
P-Channel MOSFET
Compliant
(1, 2, 5, 6) D
(4) S
Symbol
Symbol
T
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
Vishay Siliconix
−55 to 150
Limit
Limit
"3.5
"2.7
"20
"20
−1.7
62.5
−30
2.0
1.3
Si3455DV
www.vishay.com
Available
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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SI3455DV-T1 Summary of contents

Page 1

... Surface Mounted on FR4 Board sec. For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm Document Number: 70194 S-50694—Rev. E, 18-Apr-05 I (A) D "3.5 "2.5 TSOP-6 Top View 2.85 mm Si3455DV-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED 25_C 70_C 25_C 70_C A Si3455DV Vishay Siliconix FEATURES ...

Page 2

... Si3455DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 70194 S-50694—Rev. E, 18-Apr- 1.60 1.45 1.30 1.15 1.00 0.85 0.70 4.5 6.0 Si3455DV Vishay Siliconix Transfer Characteristics −55_C C 16 25_C − Gate-to-Source Voltage (V) GS Capacitance 580 500 C iss 420 340 ...

Page 4

... Si3455DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.25 0.50 0.75 1.00 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.60 0. 250 mA D 0.30 0.15 0.00 −0.15 −0.30 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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