SI3455DV-T1 Vishay, SI3455DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3455DV-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI3455DV-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: ±3.5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70194
S-50694—Rev. E, 18-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.24
0.18
0.12
0.06
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0.0
0
0
V
GS
V
I
= 10, 9, 8, 7 V
D
V
DS
= 3.5 A
GS
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
V
4
DS
1.5
1
Q
Output Characteristics
g
− Drain-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
8
3.0
2
12
V
GS
= 10 V
4.5
3
16
6 V
5 V
4 V
3 V
6.0
20
4
1.60
1.45
1.30
1.15
1.00
0.85
0.70
580
500
420
340
260
180
100
20
16
12
20
8
4
0
−50
0
0
On-Resistance vs. Junction Temperature
−25
C
V
I
D
rss
GS
1
= 3.5 A
V
V
= 10 V
6
DS
GS
T
C
Transfer Characteristics
J
0
oss
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
2
− Gate-to-Source Voltage (V)
Capacitance
25
12
3
C
Vishay Siliconix
50
T
iss
25_C
C
= −55_C
4
18
75
Si3455DV
5
100
24
www.vishay.com
125_C
125
6
150
30
7
3