SI3455DV-T1 Vishay, SI3455DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3455DV-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI3455DV-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: ±3.5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: TSOP
• Lead Free Status / Rohs Status: Not Compliant

Si3455DV
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?70194.
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.15
−0.30
0.60
0.45
0.30
0.15
0.00
20
10
1
0.01
0.00
−50
0.1
2
1
10
−4
−25
Source-Drain Diode Forward Voltage
0.25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
I
D
J
V
= 250 mA
= 150_C
SD
0
0.50
− Source-to-Drain Voltage (V)
T
Threshold Voltage
J
− Temperature (_C)
25
Single Pulse
0.75
10
50
−3
1.00
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
75
J
= 25_C
1.25
100
1.50
125
10
−2
Square Wave Pulse Duration (sec)
For related documents such as package/tape drawings, part marking, and reliability data, see
1.75
150
10
−1
0.40
0.32
0.24
0.16
0.08
0.00
30
24
18
12
0.01
6
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
P
− Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
− T
4
t
Time (sec)
A
1
= P
t
2
DM
1.00
Z
thJA
thJA
S-50694—Rev. E, 18-Apr-05
t
t
6
I
1
2
Document Number: 70194
D
(t)
= 3.5 A
= 62.5_C/W
10
8
10.00
30
10