LX5510LQ MICROSEMI, LX5510LQ Datasheet - Page 2

• Manufacturer Part Number: LX5510LQ
• Manufacturer: MICROSEMI
• Type: Power Amplifierr

Specifications of LX5510LQ

• Number Of Channels: 1
• Frequency (max): 2.5GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 3.3V
• Package Type: MLPQ
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 180@3.3VmA
• Operating Temperature Classification: Industrial
• Operating Temp Range: -40C to 85C
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

Copyright © 2000
Rev. 1.0d 2005-08-18
RF OUT
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power........................................................................................... 15dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-65°C to +150°C
Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
RF IN
Name
GND
VCC
VB1
VB2
VC1
VC2
LQ
THERMAL RESISTANCE
THERMAL RESISTANCE
Ground. Currents are positive into, negative out of specified terminal
x denotes respective pin designator 1, 2, or 3
TM
Plastic MLPQ 16-Pin
RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,
resulting in a single supply voltage (referred to as Vc).
RF output.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor,
followed by a 8.2 nH blocking inductor at the supply side.
Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor
and 1 uF bypass capacitor.
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
A B S O L U T E M A X I M U M R A T I N G S
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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JUNCTION TO
JUNCTION TO
T H E R M A L D A T A
F U N C T I O N A L P I N D E S C R I P T I O N
C
A
ASE
MBIENT
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Integrated Products Division
JC
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Microsemi
JA
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Description
.
10°C/W
50°C/W
P
RODUCTION
RoHS / Pb-free 100% Matte Tin Lead Finish
RF OUT
RF OUT
N/C = No connect
D
P A C K A G E P I N O U T
VC2
ATA
N/C
S
12
11
1
0
9
HEET
LQ P
13 14 15 16
(Bottom View)
8
7
ACKAGE
* Pad is Ground
6
*
5
1
2
3
4
LX5510
N/C
RF IN
RF IN
N/C
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