H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 4

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

1. SUMMARY DESCRIPTION
Power Supply, and with x8 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass
storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data
while old data is erased.
the 4224 byte page in typical 800 us and an erase operation can be performed in typical 2.5 ms on a 512 K byte block.
to read 2 pages a time (one per each plane) to erase 2 blocks a time (again, one per each plane). As a consequence,
multiplane architecture allows program time reduction and erase time reduction.
output as well as command input. This interface allows a reduced pin count and easy migration towards different densities,
without any rearrangement of footprint.
Program/Erase Controller automates all read, program and erase functions including pulse repetition, where required, and
internal verification and margining of data. The modify operations can be locked using the WP input.
memories the R/B pins can be connected all together to provide a global status signal.
the data can be directly programmed in another page inside the same array section without the time consuming serial data
insertion phase. Data read out after copy back read (both for single and multiplane cases) is allowed.
erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
memory device by a microcontroller, since the CE transitions do not stop the read operation.
Rev 0.0 / Jul. 2008
1.1 Product List
Hynix NAND H27U8G8T2B Series have 1024 M x 8 bit with spare 32 M x 8 bit capacity. The device is offered in 3.3 V Vcc
The device contains 2048 blocks, composed by 128 pages. Every cell holds two bits. A program operation allows to write
In addition to this, thanks to multi-plane architecture, it is possible to program 2 pages a time (one per each plane) or
Data in the page can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/
Commands, Data and Addresses are synchronously introduced using CE, WE, RE, ALE and CLE input pin. The on-chip
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multiple
The copy back function allows the optimization of defective blocks management: when a page program operation fails
Even the write-intensive systems can take advantage of the H27U8G8T2B Series extended reliability of 5 K program/
The chip supports CE don't care function. This function allows the direct download of the code from the NAND Flash
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
The H27U8G8T2B is available in 48-TSOP1 12 x 20 mm.
PART NUMBER
H27U8G8T2B
ORGANIZATION
x8
8 Gbit (1024 M x 8 bit) NAND Flash
Vcc RANGE
2.7V ~ 3.6V
H27U8G8T2B Series
PACKAGE
48-TSOP1
Preliminary
4