HY27US08281A-TPCB Hynix, HY27US08281A-TPCB Datasheet - Page 16

• Manufacturer Part Number: HY27US08281A-TPCB
• Description: Flash Mem Parallel 3.3V 128M-Bit 16M x 8 10us 48-Pin TSOP-I
• Manufacturer: Hynix

Specifications of HY27US08281A-TPCB

• Package: 48TSOP-I
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 16KByte x 1024
• Support Of Page Mode: Yes
• Timing Type: Asynchronous
• Operating Temperature: 0 to 70 °C
• Interface Type: Parallel

Rev 0.6 / Nov. 2005
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
T
Vcc
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
IO
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
T
BIAS
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
1004
Min
Typ
HY27US(08/16)281A Series
Max
1024
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
16