LM833N National Semiconductor, LM833N Datasheet - Page 15

• Manufacturer Part Number: LM833N
• Description: 07B7004
• Manufacturer: National Semiconductor

Specifications of LM833N

• No. Of Channels: 2
• Supply Voltage Range: ± 5V To ± 15V
• Load Impedance: 2kohm
• Operating Temperature Range: -40°C To +85°C
• Amplifier Case Style: DIP
• No. Of Pins: 8
• Slew Rate: 7V/µs
• Rohs Compliant: No
• Number Of Channels: 2
• Voltage Gain Db: 110 dB
• Common Mode Rejection Ratio (min): 80 dB
• Input Offset Voltage: 5 mV at +/- 15 V
• Supply Current: 8 mA at +/- 15 V
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 85 C
• Package / Case: MDIP
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: - 40 C
• Leaded Process Compatible: No

Typical Applications
LM833 MDC MWC
DUAL AUDIO OPERATIONAL AMPLIFIER
DIE/WAFER CHARACTERISTICS
SIGNAL NAME
OUTPUT A
INPUT A-
INPUT A+
VEE-
INPUT B+
INPUT B-
OUTPUT B
VCC+
Physical Die Identification
Die Step
Wafer Diameter
Dise Size (Drawn)
Thickness
Min Pitch
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
PAD# NUMBER
Fabrication Attributes
Physical Attributes
(Referenced to die center, coordinates in µm) NC = No Connection
1
2
3
4
5
6
7
8
(Continued)
Die Bond Pad Coordinate Locations (A - Step)
LM833A
A
150mm
1219µm x 1270µm
48mils x 50mils
406µm Nominal
288µm Nominal
-476
-476
-476
476
476
476
-0
X
X/Y COORDINATES
0
Die Layout (A - Step)
15
-212
-500
-500
-500
-212
500
500
500
Y
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
Back Side Metal
Back Side Connection
00521854
General Die Information
110
110
110
110
110
110
110
110
X
PAD SIZE
110µm x 110µm
ALUMINUM
VOM NITRIDE
BARE BACK
Floating
x
x
x
x
x
x
x
x
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110
110
110
110
110
110
110
110
Y