LM1875T/NOPB National Semiconductor, LM1875T/NOPB Datasheet - Page 2

• Manufacturer Part Number: LM1875T/NOPB
• Description: IC AMP AUDIO PWR 30W AB TO220-5
• Manufacturer: National Semiconductor
• Type: Class ABr

Specifications of LM1875T/NOPB

• Output Type: 1-Channel (Mono)
• Max Output Power X Channels @ Load: 30W x 1 @ 8 Ohm
• Voltage - Supply: 16 V ~ 60 V, ±8 V ~ 30 V
• Features: Short-Circuit and Thermal Protection
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Amplifier Type: Audio
• Bandwidth: 70 kHz (Power), 5.5 MHz (Gain)
• Current, Input Bias: ±0.2 μA
• Current, Input Offset: 0 mA
• Current, Supply: 70 mA
• Harmonic Distortion: 0.015 %
• Open Loop Gain: 90
• Package Type: TO220-5
• Slew Rate: 8
• Voltage, Input: -25 to +25 V
• Voltage, Input Offset: ±1 mV
• Voltage, Noise: 3 μV
• Voltage, Supply: 16 to 60 V
• Amplifier Class: B
• No. Of Channels: 1
• Output Power: 25W
• Supply Voltage Range: 16V To 60V
• Load Impedance: 8ohm
• Operating Temperature Range: 0°C To +150°C
• Amplifier Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LM1875T; *LM1875T/NOPB; LM1875; LM1875T

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Supply Current
Output Power (Note 2)
THD (Note 2)
Offset Voltage
Input Bias Current
Input Offset Current
Gain-Bandwidth Product
Open Loop Gain
PSRR
Max Slew Rate
Current Limit
Equivalent Input Noise Voltage
Absolute Maximum Ratings
Electrical Characteristics
V
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Assumes the use of a heat sink having a thermal resistance of 1˚C/W and no insulator with an ambient temperature of 25˚C. Because the output limiting
circuitry has a negative temperature coefficient, the maximum output power delivered to a 4Ω load may be slightly reduced when the tab temperature exceeds 55˚C.
Typical Applications
Supply Voltage
Input Voltage
Storage Temperature
Junction Temperature
CC
=+25V, −V
Parameter
EE
=−25V, T
AMBIENT
=25˚C, R
P
THD=1%
P
P
P
P
f
DC
V
V
20W, 8Ω, 70 kHz BW
V
R
o
OUT
OUT
OUT
OUT
OUT
CC
EE
OUT
−65˚C to + 150˚C
S
=20 kHz
=600Ω, CCIR
, 1 kHz, 1 Vrms
, 1 kHz, 1 Vrms
L
=0W
=20W, f
=20W, f
=20W, R
=20W, R
=8Ω, A
= V
Typical Single Supply Operation
−V
(Note 1)
EE
SUPPLY
Conditions
to V
V
150˚C
o
o
L
L
=20 (26 dB), f
=1 kHz
=20 kHz
60V
=4Ω, f
=4Ω, f
CC
−10V
o
o
=1 kHz
=20 kHz
2
o
Lead Temperature
=1 kHz, unless otherwise specified.
(Soldering, 10 seconds)
θ
θ
JC
JA
Typical
0.015
0.022
±
0.05
0.07
5.5
±
70
25
90
95
83
0.2
0
8
4
3
1
00503003
Tested Limits
±
±
100
0.4
0.6
±
52
52
0.5
3
15
2
µVrms
Units
260˚C
MHz
V/µs
mA
mV
73˚C
µA
µA
dB
dB
dB
W
%
%
%
%
A
3˚C