2MBI150N-060 Fuji Electric holdings CO.,Ltd, 2MBI150N-060 Datasheet

2MBI150N-060

Manufacturer Part Number

2MBI150N-060

Description

IGBT MODULE ( N series )

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI150N-060.pdf (4 pages)

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IGBT MODULE ( N series )

n n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

n n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n n Maximum Ratings and Characteristics

•

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on Time

Turn-off Time

Diode Forward On-Voltage

Reverse Recovery Time

•

Thermal Resistance

Collector-Emitter Voltage

Gate -Emitter Voltage

Collector

Current

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

Screw Torque

Absolute Maximum Ratings

Electrical Characteristics

Thermal Characteristics

Items

Continuous

1ms

Continuous

1ms

A.C. 1min.

( at T

( T

=25°C )

=25°C

Note: *1:Recommendable Value; 2.5

Mounting *1

Terminals *1

-I

Symbols

)

Symbols

C PULSE

CES

GES

OFF

CES

GES

stg

GE(th)

CE(sat)

ies

oes

res

th(c-f)

th(j-c)

-40

Ratings

+150

2500

IGBT

Diode

With Thermal Compound

600

150

300

150

300

600

3.5

f=1MHz

+125

=150A V

=150A

3.5 Nm (M5)

=16

=0V V

=10V

=0V V

=20V I

=15V I

=0V

=300V

= 15V

Test Conditions

n n Outline Drawing

Units

=150mA

=150A

°C

=600V

= 20V

=0V

n n Equivalent Circuit

Min.

4.5

9900

2200

1000

Typ.

0.05

0.6

0.2

0.6

0.2

Max.

0.21

0.47

300

1.0

7.5

2.8

1.2

0.6

1.0

0.35

3.0

Units

°C/W

µA

µs

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2MBI150N-060 Summary of contents

Page 1

IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current ...

Page 2

Collector current vs. Collector-Emitter voltage T =25°C j 350 V =20V,15V,12V GE 300 250 200 150 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...

Page 3

Switching time vs =300V, I =150A, V =±15V 1000 100 10 10 Gate resistance : R Forward current vs. Forward voltage 350 T 300 250 200 150 100 50 ...

Page 4

Switching loss vs. Collector current V =300V 100 150 Collector Current : I Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 ...

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