RF3100-2 RF Micro Devices, RF3100-2 Datasheet

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RF3100-2

Manufacturer Part Number
RF3100-2
Description
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3V hand-held systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS hand-held digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Optimum Technology Matching® Applied
Rev A3 011017
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
Si BJT
Si Bi-CMOS
VREG
VCC1
RF IN
Functional Block Diagram
1
2
3
ü
GaAs HBT
SiGe HBT
4
2
GaAs MESFET
Si CMOS
7
6
5
GND
RF OUT
VCC2
input
• Designed for Compatibility with Qualcomm
Chipsets
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
3V 900MHZ LINEAR AMPLIFIER MODULE
• Input/Output Internally Matched@50
• Single 3V Supply
• 28dBm Linear Output Power
• 29dB Linear Gain
• 45mA Idle Current
RF3100-2
RF3100-2 PCBA Fully Assembled Evaluation Board
NOTE: Nominal thickness, 1.55 mm.
0.800 sq
1.700
2.500
Package Style: LGM (6mmx6mm)
typ
3V 900MHz Linear Amplifier Module
3.000
RF3100-2
0.600
0.100
http://www.rfmd.com
Fax (336) 664 0454
4.390
0.100
Tel (336) 664 1233
Dimensions in mm.
6.0 sq
2-269
2

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RF3100-2 Summary of contents

Page 1

... RF amplifier in dual- mode 3V CDMA/AMPS hand-held digital cellular equip- ment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3100-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics ...

Page 2

... RF3100-2 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (P 31dBm) OUT Control Voltage (V ) REG Input RF Power 2 Mode Voltage (V ) MODE Operating Case Temperature Storage Temperature Parameter High Power State (V Low) MODE Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power ...

Page 3

... V 140 200 < 0.5 V 2.85 2.9 V 0.5 V 3.0 V RF3100-2 Condition Typical Performance at V =3.2V =2.85V, T =25°C, REG AMB Frequency=824MHz to 849MHz (unless otherwise specified) V =3.7V, V =2.85V, P =31.5dBm CC REG OUT (room temperature) No damage. No oscillations. >-70dBc T =25°C AMB V =Low, V =2.85V ...

Page 4

... RF3100-2 Pin Function Description 1 VCC1 First stage collector supply. A low frequency decoupling capacitor (e.g., 4 required input internally matched This input is internally AC-coupled. 3 VREG Regulated voltage supply for amplifier bias. In Power Down mode, both V REG 2 4 VMODE For nominal operation (High Power Mode), V set HIGH, devices are turned off to improve efficiency ...

Page 5

... Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 4 strip VREG 4.7 F Rev A3 011017 4.7 F 4.7 F VMODE VCC2 RF3100-2 50 strip J6 RF OUT 2-273 2 ...

Page 6

... RF3100-2 Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” 2 2-274 Evaluation Board Layout Board Size 1.5” x 1.5” Rev A3 011017 ...

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