SI4435DY-T1-REVA Vishay Semiconductors, SI4435DY-T1-REVA Datasheet

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... V = –4 SO Top View Ordering Information: Si4435DY-T1–REV A Si4435DY-T1–A–E3 (Lead (Pb)-Free) Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

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... Si4435DY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...

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... 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –50 Si4435DY Vishay Siliconix Transfer Characteristics T = -55°C C 25° C 125° – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

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... Si4435DY Vishay Siliconix Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0.6 0.4 = 250 µ 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...